JFAM25N50E datasheet, аналоги, основные параметры

Наименование производителя: JFAM25N50E  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 85 ns

Cossⓘ - Выходная емкость: 1050 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm

Тип корпуса: TO3P

  📄📄 Копировать 

Аналог (замена) для JFAM25N50E

- подборⓘ MOSFET транзистора по параметрам

 

JFAM25N50E даташит

 ..1. Size:1363K  jiaensemi
 jfam25n50e.pdf pdf_icon

JFAM25N50E

JFAM25N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.1. Size:545K  jiaensemi
 jfam20n50d.pdf pdf_icon

JFAM25N50E

JFAM20N50D 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.2. Size:497K  jiaensemi
 jfam24n50c.pdf pdf_icon

JFAM25N50E

JFAM24N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

 9.3. Size:833K  jiaensemi
 jfam20n65c.pdf pdf_icon

JFAM25N50E

JFAM20N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... JFAM20N50D, JFAM20N50E, JFAM20N60C, JFAM20N60D, JFAM20N60E, JFAM20N65C, JFAM20N65E, JFAM24N50C, 5N65, JFAM30N50E, JFAM30N60E, JFAM50N50C, JFAM7N90C, JFFC10N65D, JFFC13N65D, JFFC20N65C, JFFC7N65E