YMP230N55 Specs and Replacement
Type Designator: YMP230N55
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 230 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 1680 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220
YMP230N55 substitution
- MOSFET ⓘ Cross-Reference Search
YMP230N55 datasheet
ymp230n55.pdf
http //www.ymicpower.com YMP230N55 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The YMP230N55 uses advanced trench technology and BVDSS typ. 55 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 2 m This device is suitable for use in PWM, load switching and max. 3 m general purpose applications. ID 230 A Fea... See More ⇒
Detailed specifications: MMF80R450QZTH, MMF80R900PCTH, MMF80R900QZTH, MMF80R900PBTH, MMFT60R195PCTH, S40N14S, HY3408, STP1806, IRLB4132, JFAM18N50C, JFAM20N50C, JFAM20N50D, JFAM20N50E, JFAM20N60C, JFAM20N60D, JFAM20N60E, JFAM20N65C
Keywords - YMP230N55 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: VN0104ND
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