All MOSFET. YMP230N55 Datasheet

 

YMP230N55 Datasheet and Replacement


   Type Designator: YMP230N55
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 230 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 160 nC
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 1680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO220
 

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YMP230N55 Datasheet (PDF)

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YMP230N55

http://www.ymicpower.comYMP230N55 N-Channel Enhancement Mode Power MOSFET Product Summary General Description The YMP230N55 uses advanced trench technology and BVDSS typ. 55 V design to provide excellent RDS(ON) with low gate charge. RDS(ON) typ. 2 m This device is suitable for use in PWM, load switching and max. 3 m general purpose applications. ID 230 A Fea

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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