8205A MOSFET. Datasheet pdf. Equivalent
Type Designator: 8205A
Marking Code: 8205A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.25 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 14 nS
Drain-Source Capacitance (Cd): 115 pF
Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm
Package: SOT23-6
8205A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
8205A Datasheet (PDF)
8205a.pdf
GOFORD 8205APR ODUC T S UMMAR YD1 D2-VDSS RDS(ON) IDG 1G 2 @ (typ) 4.0V 4A20V21mS 1S 2S OT26F E ATUR E STop ViewS uper high dense cell design for low R DS (ON).S 1G161R ugged and reliable. D1/D22 5 D1/D234S 2G2S urface Mount Package.ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)Limit UnitParameter S ymbolDrain-S ou
8205a.pdf
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8205a.pdf
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ngd8205a.pdf
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ut8205a.pdf
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cjl8205a.pdf
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Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8205ADual N-channel 20V, TSSOP-8 MOSFET N-Dual N-channel 20V, TSSOP-8 MOSFET N-Dual N-channel 20V, TSSOP-8 MOSFET N-Dual N-channel 20V, TSSOP-8 MOSFET N-
h8205a.pdf
Spec. No. : MOS200905 HI-SINCERITY Issued Date : 2009.02.27 Revised Date : 2010.06.30 MICROELECTRONICS CORP. Page No. : 1/4 H8205A 8-Lead Plastic TSSOP-8LDual N-Channel Enhancement-Mode MOSFET (20V, 6A) Package Code: TS H8205A Symbol & Pin Assignment Description 8 7 6 5 Pin 1: Drain Pin 2 / 3: Source 1 Q2This N-Channel 2.5V specified MOSFET is a rugged gate version
s8205a.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFETN MOSFETDual N-Channel Enhancement Mode Field Effect TransistorS8205ATSSOP-8Unit: mmFeatures5A,20V.rDS(on) = 0.025 @VGS =4.5 VrDS(on) = 0.040 @VGS =2.5 V.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 8 VContinuous Drain Current ID A5
ssf8205a.pdf
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sm8205ao.pdf
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ftk8205a.pdf
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blm8205a.pdf
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nce8205a.pdf
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smc8205aw.pdf
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smc8205as.pdf
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fs8205a.pdf
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fs8205a.pdf
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vbzb8205a.pdf
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RoHS COMPLIANT YJS8205A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 5.5A D R ( at V =4.5V) 25mohm DS(ON) GS R ( at V =2.5V) 32mohm DS(ON) GS R ( at V =1.8V) 49mohm DS(ON) GS 100% V Tested DSGeneral Description Trench Power MV MOSFET technology High Power and current handing capability
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hm8205a.pdf
HM8205ADual N-Channel Enhancement Mode Power MOSFET D1D2Description The HM8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram General Features VDS = 19.5V,ID = 6A RDS(
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