8205A MOSFET. Datasheet pdf. Equivalent

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8205A Datasheet (PDF)

..1. 8205a.pdf Size:1693K _goford

GOFORD 8205APR ODUC T S UMMAR YD1 D2-VDSS RDS(ON) IDG 1G 2 @ (typ) 4.0V 4A20V21mS 1S 2S OT26F E ATUR E STop ViewS uper high dense cell design for low R DS (ON).S 1G161R ugged and reliable. D1/D22 5 D1/D234S 2G2S urface Mount Package.ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)Limit UnitParameter S ymbolDrain-S ou

..2. 8205a.pdf Size:695K _umw-ic

RUMW UMW 8205AUMW 8205ADual N-Channel Enhancement Mode MOSFET APPLIACTION FEATURES Portable Equipment20V 5A N-channel Trench MosfetBattery Powered SystemRDSON27m @Vgs=4.5V, Id=5ARDSON36m @Vgs=2.5V, Id=3ALow gate ChargeFast switching capabilityHigh reliability and ruggedSYMBOL ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Drain-

..3. 8205a.pdf Size:1989K _guangdong_hottech

Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET 8205ADescription The 8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 19.5V,ID = 6A RDS(ON)

..4. 8205a 8205s.pdf Size:177K _jsmsemi

8205-A20V N-Channel Enhancement-Mode MOSFET 2.5V TSSOP-8/SOT-23-6 8205A/TSSOP-8 8205S/SOT-23-6 G1 NC G2654D1/D28 D1/D2S1D S2 S17 S2S16 S2G15 G2Drain123 N-Channel MOSFET Gate1Gate2So

0.1. ngd8205a.pdf Size:115K _onsemi

NGD8205N, NGD8205ANIgnition IGBT20 Amp, 350 Volt, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required

0.2. ut8205a.pdf Size:217K _utc

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @VGS = 4.5 V * Ultra low gate charge ( typical 23 nC ) * Low re

 0.3. ut8205al-al6-r ut8205ag-ag6-r ut8205al-s08-r ut8205ag-s08-r ut8205al-p08-r ut8205ag-p08-r.pdf Size:420K _utc

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @ VGS=4.5V, ID=6.0A * Fast switching capability * Avalanch

0.4. cjl8205a.pdf Size:2661K _jiangsu

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8205A Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-6L 30m@4.5V 5A20V@2.5V45mFEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and Current Handing Ca

 0.5. pt8205a.pdf Size:2146K _htsemi

PT8205A20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38m RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications 1 8D1 D22 7S1S23 6S1 S24 5G1 G2TSSOP-8Mi

0.6. ceg8205a.pdf Size:434K _cet

CEG8205ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6A, RDS(ON) = 25m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V.Super High dense cell design for extremely low RDS(ON).High power and current handing capability.D 1 8 DLead free product is acquired.2 7 S2S1TSSOP-8 for Surface Mount Package.S1 3 6 S24G1 5 G2G2S2S2G1DS1S1DTSSOP

0.7. gm8205a.pdf Size:344K _gsme

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8205ADual N-channel 20V, TSSOP-8 MOSFET N-Dual N-channel 20V, TSSOP-8 MOSFET N-Dual N-channel 20V, TSSOP-8 MOSFET N-Dual N-channel 20V, TSSOP-8 MOSFET N-

0.8. h8205a.pdf Size:51K _hsmc

Spec. No. : MOS200905 HI-SINCERITY Issued Date : 2009.02.27 Revised Date : 2010.06.30 MICROELECTRONICS CORP. Page No. : 1/4 H8205A 8-Lead Plastic TSSOP-8LDual N-Channel Enhancement-Mode MOSFET (20V, 6A) Package Code: TS H8205A Symbol & Pin Assignment Description 8 7 6 5 Pin 1: Drain Pin 2 / 3: Source 1 Q2This N-Channel 2.5V specified MOSFET is a rugged gate version

0.9. s8205a.pdf Size:381K _shenzhen

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFETN MOSFETDual N-Channel Enhancement Mode Field Effect TransistorS8205ATSSOP-8Unit: mmFeatures5A,20V.rDS(on) = 0.025 @VGS =4.5 VrDS(on) = 0.040 @VGS =2.5 V.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 8 VContinuous Drain Current ID A5

0.10. ssf8205a.pdf Size:450K _silikron

SSF8205A DESCRIPTION D1D2The SSF8205A uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON)with gate voltages as low as 0.65V. This device is G1 G2suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram GENERAL FEATURES V = 20V,I = 6A DS DR

0.11. fs8205a tssop-8.pdf Size:391K _can-sheng

0.12. cs8205a sot-23-6.pdf Size:387K _can-sheng

0.13. cs8205a 6a sot-23-6.pdf Size:292K _can-sheng

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com8205ADual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.27.5 @ VG S = 4.0V20V 6A S urface Mount Package.37.5@V G S = 2.5VD1 D2-

0.14. sm8205ao.pdf Size:235K _sino

SM8205AODual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD2 18V/6A,S2S2RDS(ON)= 23m (typ.) @ VGS= 4.5VG2RDS(ON)= 34m (typ.) @ VGS= 2.5VD1 100% UIS Tested S1S1G1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of TSSOP-8 (RoHS Compliant)(1) (8)D1 D2Applications(4) (5) Power Management in Notebook Computer,G1G2Po

0.15. ftk8205a.pdf Size:287K _first_silicon

SEMICONDUCTOR FTK8205ATECHNICAL DATAD 1D 2DESCRIPTION The FTK8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G 1 G 2with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S 1 S 2Schematic diagram GENERAL FEATURES VDS = 20V,ID = 6A D1 D2RD

0.16. ki8205a.pdf Size:672K _kexin

SMD Type MOSFETSMDTypeDual N-Channel Enhancement MOSFETKI8205ATSSOP-8Unit: mmFeatures6.45+0.1-0.16.5 A, 20 V. rDS(on) = 0.025 @ VGS = 4.5 V 4.45+0.1-0.1rDS(on) = 0.029 @ VGS = 2.5 V.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 10 VContinuous Drain Current ID 6.5 APulsed Drain Current IDM 20 A

0.17. blm8205a.pdf Size:629K _belling

Pb Free ProductBLM8205A N-Channel Enhancement Mode Power MOSFET D1D2Description The BLM8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram General Features VDS = 19.

0.18. nce8205a.pdf Size:403K _ncepower

Pb Free Producthttp://www.ncepower.com NCE8205ANCE N-Channel Enhancement Mode Power MOSFET D1D2Description The NCE8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gener

0.19. ps8205a.pdf Size:410K _prospower

PS8205A 20V Dual Channel NMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS8205A 20V Dual Channel NMOSFET 2. Applications 1. General Description Battery management in nomadic equipment The PS8205A uses advanced trench technology DC motor control and design to provide excellent Rds(on) with low DC-DC convertersgate charge. This

0.20. smc8205aw.pdf Size:376K _semtron

SMC8205AW 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC8205AW is the Dual N-Channel logic 20V/6.0A, RDS(ON) =21m(typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/5.2A, RDS(ON) =25m(typ.)@VGS =2.5V which is produced using high cell density. advanced trench technology to provide excellent RDS(ON). Super high density ce

0.21. smc8205as.pdf Size:499K _semtron

SMC8205AS 20V Dual N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC8205AS is the Dual N-Channel logic 20V/6.0A, RDS(ON) =20m(typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/5.2A, RDS(ON) =24m(typ.)@VGS =2.5V which is produced using high cell density. advanced trench technology to provide excellent RDS(ON). Super high densi

0.22. ap8205a.pdf Size:1327K _allpower

0.23. fs8205a.pdf Size:302K _fortune_semi

REV. 1.2 FS8205A-DS-12_EN AUG 2009Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET OnlyFSCPropertiesReferenceForFS8205A Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.886-2-28094742 Fax886-2-28094874 www.ic-fortune.com This manual contai

0.24. fs8205a.pdf Size:4365K _fuxinsemi

FS8205AN-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 25m@4.5V 20V 6A 32m@2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagramSOT-23-6L Marking G1 D1/D2 G2 8205AS1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1FS

0.25. et8205a.pdf Size:573K _eternal

Eternal Semiconductor Inc.ET8205ADual N-Channel High Density Trench MOSFET (20V, 6A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.19 @ VGS = 4.5V, ID=6A20V 6.0A 20@ VGS = 4.0V, ID=6A25@ VGS = 2.5V, ID=5.2AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package LeadPb-free and halogen-freePin 1

0.26. s8205a.pdf Size:451K _guangdong_hottech

S8205ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES Low on-resistance:V =20V,I =5A,R 25m@V =4.5VDS D DS(ON) GS Low gate charge For synchronous rectifier applications Surface Mount deviceSOT-23-6MECHANICAL DATA Case: SOT-23-6 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Moisture Sensitivity: L

0.27. si8205a.pdf Size:2585K _cn_szxunrui

SOT-23-6 Plastic-Encapsulate MOSFETS SI8205ADual N-Channel MOSFETSI8205A V(BR)DSS RDS(on)MAX IDMax SOT-23-60.022 @ 4.5V20V6.0A0.030 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKINGAPPLICATION Battery Protection Load Switch

0.28. .8205a.pdf Size:328K _cn_shenzhen_fuman_elec

FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD..8205A (S&CIC1850) 20V N MOS 2 3 420V N-Channel Enhancement-Mode MOSFETRDS(ON), Vgs@2.5V, Ids@3A = 2

0.29. s8205a.pdf Size:2391K _cn_tuofeng

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23-6 Plastic-Encapsulate MOSFETS S8205A S8205A Dual N-Channel MOSFETV(BR)DSS RDS(on)MAX IDMax SOT-23-60.022 @ 4.5V20V6.0A0.030 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKINGAPPLI

0.30. wst8205a.pdf Size:1703K _winsok

WST8205ADual N-Ch MOSFETGeneral Description Product SummeryThe WST8205A is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 32m 5.3Afor most of the small power switching and load switch applications.Applications The WST8205A meet the RoHS and Green High Frequency Point-of-Load

0.31. se8205a.pdf Size:422K _cn_sino-ic

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE8205A N-Channel Enhancement Mode Field Effect Transistor Revision:B External Dimensions: (Unit:mm) Features VDS = 20V,ID = 6A RDS(ON)

0.32. ut8205ag-ag6.pdf Size:1472K _cn_vbsemi

UT8205AG-AG6www.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G2

0.33. vbzc8205a.pdf Size:787K _cn_vbsemi

VBZC8205Awww.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.025 at VGS = 4.5 V Available4.520RoHS*0.032 at VGS = 2.5 V 3.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RA

0.34. vbzb8205a.pdf Size:1138K _cn_vbsemi

VBZB8205Awww.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G

0.35. tpm8205ats6.pdf Size:1805K _cn_tech_public

0.36. ut8205ag-ag6.pdf Size:405K _cn_tech_public

www.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.tw

0.37. fs8205a.pdf Size:1795K _cn_tech_public

0.38. yjs8205a.pdf Size:1323K _cn_yangzhou_yangjie_elec

RoHS COMPLIANT YJS8205A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 5.5A D R ( at V =4.5V) 25mohm DS(ON) GS R ( at V =2.5V) 32mohm DS(ON) GS R ( at V =1.8V) 49mohm DS(ON) GS 100% V Tested DSGeneral Description Trench Power MV MOSFET technology High Power and current handing capability

0.39. ttk8205a.pdf Size:407K _cn_wuxi_unigroup

TTK8205A Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET Features Product Summary VDS 20V Trench Power Technology Low RDS(ON) RDS(ON) (at VGS=10V)

0.40. hm8205a.pdf Size:438K _cn_hmsemi

HM8205ADual N-Channel Enhancement Mode Power MOSFET D1D2Description The HM8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram General Features VDS = 19.5V,ID = 6A RDS(

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