Справочник MOSFET. 8205A

 

8205A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 8205A
   Маркировка: 8205A
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.25 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
   Максимально допустимый постоянный ток стока |Id|: 4 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 14 ns
   Выходная емкость (Cd): 115 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.025 Ohm
   Тип корпуса: SOT23-6

 Аналог (замена) для 8205A

 

 

8205A Datasheet (PDF)

 ..1. Size:1693K  goford
8205a.pdf

8205A
8205A

GOFORD 8205APR ODUC T S UMMAR YD1 D2-VDSS RDS(ON) IDG 1G 2 @ (typ) 4.0V 4A20V21mS 1S 2S OT26F E ATUR E STop ViewS uper high dense cell design for low R DS (ON).S 1G161R ugged and reliable. D1/D22 5 D1/D234S 2G2S urface Mount Package.ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)Limit UnitParameter S ymbolDrain-S ou

 ..2. Size:695K  umw-ic
8205a.pdf

8205A
8205A

RUMW UMW 8205AUMW 8205ADual N-Channel Enhancement Mode MOSFET APPLIACTION FEATURES Portable Equipment20V 5A N-channel Trench MosfetBattery Powered SystemRDSON27m @Vgs=4.5V, Id=5ARDSON36m @Vgs=2.5V, Id=3ALow gate ChargeFast switching capabilityHigh reliability and ruggedSYMBOL ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Drain-

 ..3. Size:1989K  guangdong hottech
8205a.pdf

8205A
8205A

Plastic-Encapsulate Mosfets N-Channel Enhancement Mode Power MOSFET 8205ADescription The 8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 19.5V,ID = 6A RDS(ON)

 ..4. Size:177K  jsmsemi
8205a 8205s.pdf

8205A
8205A

8205-A20V N-Channel Enhancement-Mode MOSFET 2.5V TSSOP-8/SOT-23-6 8205A/TSSOP-8 8205S/SOT-23-6 G1 NC G2654D1/D28 D1/D2S1D S2 S17 S2S16 S2G15 G2Drain123 N-Channel MOSFET Gate1Gate2So

 0.1. Size:115K  onsemi
ngd8205a.pdf

8205A
8205A

NGD8205N, NGD8205ANIgnition IGBT20 Amp, 350 Volt, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required

 0.2. Size:420K  utc
ut8205al-al6-r ut8205ag-ag6-r ut8205al-s08-r ut8205ag-s08-r ut8205al-p08-r ut8205ag-p08-r.pdf

8205A
8205A

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @ VGS=4.5V, ID=6.0A * Fast switching capability * Avalanch

 0.3. Size:217K  utc
ut8205a.pdf

8205A
8205A

UNISONIC TECHNOLOGIES CO., LTD UT8205A Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT8205A uses advanced technology to provide fast switching, low on-resistance and cost-effectiveness. This device is suitable for all commercial-industrial surface mount applications. FEATURES * RDS(ON) 28m @VGS = 4.5 V * Ultra low gate charge ( typical 23 nC ) * Low re

 0.4. Size:2661K  jiangsu
cjl8205a.pdf

8205A
8205A

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8205A Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-6L 30m@4.5V 5A20V@2.5V45mFEATURE APPLICATION TrenchFET Power MOSFET Battery Protection Excellent RDS(on) Load Switch Low Gate Charge Power Management High Power and Current Handing Ca

 0.5. Size:2146K  htsemi
pt8205a.pdf

8205A
8205A

PT8205A20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 5.2A = 38m RDS(ON), Vgs@ 4.5V, Ids@ 6A = 28m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications 1 8D1 D22 7S1S23 6S1 S24 5G1 G2TSSOP-8Mi

 0.6. Size:434K  cet
ceg8205a.pdf

8205A
8205A

CEG8205ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6A, RDS(ON) = 25m @VGS = 4.5V. RDS(ON) = 35m @VGS = 2.5V.Super High dense cell design for extremely low RDS(ON).High power and current handing capability.D 1 8 DLead free product is acquired.2 7 S2S1TSSOP-8 for Surface Mount Package.S1 3 6 S24G1 5 G2G2S2S2G1DS1S1DTSSOP

 0.7. Size:344K  gsme
gm8205a.pdf

8205A
8205A

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8205ADual N-channel 20V, TSSOP-8 MOSFET N-Dual N-channel 20V, TSSOP-8 MOSFET N-Dual N-channel 20V, TSSOP-8 MOSFET N-Dual N-channel 20V, TSSOP-8 MOSFET N-

 0.8. Size:51K  hsmc
h8205a.pdf

8205A
8205A

Spec. No. : MOS200905 HI-SINCERITY Issued Date : 2009.02.27 Revised Date : 2010.06.30 MICROELECTRONICS CORP. Page No. : 1/4 H8205A 8-Lead Plastic TSSOP-8LDual N-Channel Enhancement-Mode MOSFET (20V, 6A) Package Code: TS H8205A Symbol & Pin Assignment Description 8 7 6 5 Pin 1: Drain Pin 2 / 3: Source 1 Q2This N-Channel 2.5V specified MOSFET is a rugged gate version

 0.9. Size:381K  shenzhen
s8205a.pdf

8205A
8205A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFETN MOSFETDual N-Channel Enhancement Mode Field Effect TransistorS8205ATSSOP-8Unit: mmFeatures5A,20V.rDS(on) = 0.025 @VGS =4.5 VrDS(on) = 0.040 @VGS =2.5 V.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 8 VContinuous Drain Current ID A5

 0.10. Size:450K  silikron
ssf8205a.pdf

8205A
8205A

SSF8205A DESCRIPTION D1D2The SSF8205A uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON)with gate voltages as low as 0.65V. This device is G1 G2suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram GENERAL FEATURES V = 20V,I = 6A DS DR

 0.11. Size:292K  can-sheng
cs8205a 6a sot-23-6.pdf

8205A
8205A

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com8205ADual N-Channel E nhancement Mode Field E ffect TransistorPR ODUC T S UMMAR Y F E ATUR E SS uper high dense cell design for low R DS (ON).VDS S ID R DS (ON) ( m ) MaxR ugged and reliable.27.5 @ VG S = 4.0V20V 6A S urface Mount Package.37.5@V G S = 2.5VD1 D2-

 0.12. Size:387K  can-sheng
cs8205a sot-23-6.pdf

8205A
8205A

 0.13. Size:391K  can-sheng
fs8205a tssop-8.pdf

8205A
8205A

 0.14. Size:235K  sino
sm8205ao.pdf

8205A
8205A

SM8205AODual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD2 18V/6A,S2S2RDS(ON)= 23m (typ.) @ VGS= 4.5VG2RDS(ON)= 34m (typ.) @ VGS= 2.5VD1 100% UIS Tested S1S1G1 Reliable and Rugged Lead Free and Green Devices AvailableTop View of TSSOP-8 (RoHS Compliant)(1) (8)D1 D2Applications(4) (5) Power Management in Notebook Computer,G1G2Po

 0.15. Size:287K  first silicon
ftk8205a.pdf

8205A
8205A

SEMICONDUCTOR FTK8205ATECHNICAL DATAD 1D 2DESCRIPTION The FTK8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G 1 G 2with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S 1 S 2Schematic diagram GENERAL FEATURES VDS = 20V,ID = 6A D1 D2RD

 0.16. Size:672K  kexin
ki8205a.pdf

8205A
8205A

SMD Type MOSFETSMDTypeDual N-Channel Enhancement MOSFETKI8205ATSSOP-8Unit: mmFeatures6.45+0.1-0.16.5 A, 20 V. rDS(on) = 0.025 @ VGS = 4.5 V 4.45+0.1-0.1rDS(on) = 0.029 @ VGS = 2.5 V.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 10 VContinuous Drain Current ID 6.5 APulsed Drain Current IDM 20 A

 0.17. Size:629K  belling
blm8205a.pdf

8205A
8205A

Pb Free ProductBLM8205A N-Channel Enhancement Mode Power MOSFET D1D2Description The BLM8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram General Features VDS = 19.

 0.18. Size:403K  ncepower
nce8205a.pdf

8205A
8205A

Pb Free Producthttp://www.ncepower.com NCE8205ANCE N-Channel Enhancement Mode Power MOSFET D1D2Description The NCE8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Gener

 0.19. Size:410K  prospower
ps8205a.pdf

8205A
8205A

PS8205A 20V Dual Channel NMOSEFT Revision : 1.0Update Date : Apr. 2011 ProsPower Microelectronics Co., LtdPS8205A 20V Dual Channel NMOSFET 2. Applications 1. General Description Battery management in nomadic equipment The PS8205A uses advanced trench technology DC motor control and design to provide excellent Rds(on) with low DC-DC convertersgate charge. This

 0.20. Size:376K  semtron
smc8205aw.pdf

8205A
8205A

SMC8205AW 20V N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC8205AW is the Dual N-Channel logic 20V/6.0A, RDS(ON) =21m(typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/5.2A, RDS(ON) =25m(typ.)@VGS =2.5V which is produced using high cell density. advanced trench technology to provide excellent RDS(ON). Super high density ce

 0.21. Size:499K  semtron
smc8205as.pdf

8205A
8205A

SMC8205AS 20V Dual N-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe SMC8205AS is the Dual N-Channel logic 20V/6.0A, RDS(ON) =20m(typ.)@VGS =4.5V enhancement mode power field effect transistor 20V/5.2A, RDS(ON) =24m(typ.)@VGS =2.5V which is produced using high cell density. advanced trench technology to provide excellent RDS(ON). Super high densi

 0.22. Size:1327K  allpower
ap8205a.pdf

8205A
8205A

 0.23. Size:302K  fortune semi
fs8205a.pdf

8205A
8205A

REV. 1.2 FS8205A-DS-12_EN AUG 2009Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET OnlyFSCPropertiesReferenceForFS8205A Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.886-2-28094742 Fax886-2-28094874 www.ic-fortune.com This manual contai

 0.24. Size:4365K  fuxinsemi
fs8205a.pdf

8205A
8205A

FS8205AN-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 25m@4.5V 20V 6A 32m@2.5V Feature Application Advanced trench process technology Battery protection High density cell design for ultra low on-resistance Switching application Package Circuit diagramSOT-23-6L Marking G1 D1/D2 G2 8205AS1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1FS

 0.25. Size:573K  eternal
et8205a.pdf

8205A
8205A

Eternal Semiconductor Inc.ET8205ADual N-Channel High Density Trench MOSFET (20V, 6A)PRODUCT SUMMARYVDSS ID RDS(on) (m) Typ.19 @ VGS = 4.5V, ID=6A20V 6.0A 20@ VGS = 4.0V, ID=6A25@ VGS = 2.5V, ID=5.2AFeatures Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Surface mount Package LeadPb-free and halogen-freePin 1

 0.26. Size:451K  guangdong hottech
s8205a.pdf

8205A
8205A

S8205ADual N-Channel Enhancement Mode Field Effect TransistorFEATURES Low on-resistance:V =20V,I =5A,R 25m@V =4.5VDS D DS(ON) GS Low gate charge For synchronous rectifier applications Surface Mount deviceSOT-23-6MECHANICAL DATA Case: SOT-23-6 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Moisture Sensitivity: L

 0.27. Size:2585K  cn szxunrui
si8205a.pdf

8205A
8205A

SOT-23-6 Plastic-Encapsulate MOSFETS SI8205ADual N-Channel MOSFETSI8205A V(BR)DSS RDS(on)MAX IDMax SOT-23-60.022 @ 4.5V20V6.0A0.030 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKINGAPPLICATION Battery Protection Load Switch

 0.28. Size:328K  cn shenzhen fuman elec
.8205a.pdf

8205A
8205A

FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD..8205A (S&CIC1850) 20V N MOS 2 3 420V N-Channel Enhancement-Mode MOSFETRDS(ON), Vgs@2.5V, Ids@3A = 2

 0.29. Size:2391K  cn tuofeng
s8205a.pdf

8205A
8205A

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23-6 Plastic-Encapsulate MOSFETS S8205A S8205A Dual N-Channel MOSFETV(BR)DSS RDS(on)MAX IDMax SOT-23-60.022 @ 4.5V20V6.0A0.030 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKINGAPPLI

 0.30. Size:1703K  winsok
wst8205a.pdf

8205A
8205A

WST8205ADual N-Ch MOSFETGeneral Description Product SummeryThe WST8205A is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 32m 5.3Afor most of the small power switching and load switch applications.Applications The WST8205A meet the RoHS and Green High Frequency Point-of-Load

 0.31. Size:422K  cn sino-ic
se8205a.pdf

8205A
8205A

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE8205A N-Channel Enhancement Mode Field Effect Transistor Revision:B External Dimensions: (Unit:mm) Features VDS = 20V,ID = 6A RDS(ON)

 0.32. Size:787K  cn vbsemi
vbzc8205a.pdf

8205A
8205A

VBZC8205Awww.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.025 at VGS = 4.5 V Available4.520RoHS*0.032 at VGS = 2.5 V 3.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RA

 0.33. Size:1472K  cn vbsemi
ut8205ag-ag6.pdf

8205A
8205A

UT8205AG-AG6www.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G2

 0.34. Size:1138K  cn vbsemi
vbzb8205a.pdf

8205A
8205A

VBZB8205Awww.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G

 0.35. Size:405K  cn tech public
ut8205ag-ag6.pdf

8205A
8205A

www.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.twwww.sot23.com.tw

 0.36. Size:1805K  cn tech public
tpm8205ats6.pdf

8205A
8205A

 0.37. Size:1795K  cn tech public
fs8205a.pdf

8205A
8205A

 0.38. Size:1323K  cn yangzhou yangjie elec
yjs8205a.pdf

8205A
8205A

RoHS COMPLIANT YJS8205A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 20V DS I 5.5A D R ( at V =4.5V) 25mohm DS(ON) GS R ( at V =2.5V) 32mohm DS(ON) GS R ( at V =1.8V) 49mohm DS(ON) GS 100% V Tested DSGeneral Description Trench Power MV MOSFET technology High Power and current handing capability

 0.39. Size:407K  cn wuxi unigroup
ttk8205a.pdf

8205A
8205A

TTK8205A Wuxi Unigroup Microelectronics CO.,LTD. 20V N-Channel Trench MOSFET Features Product Summary VDS 20V Trench Power Technology Low RDS(ON) RDS(ON) (at VGS=10V)

 0.40. Size:438K  cn hmsemi
hm8205a.pdf

8205A
8205A

HM8205ADual N-Channel Enhancement Mode Power MOSFET D1D2Description The HM8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram General Features VDS = 19.5V,ID = 6A RDS(

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