All MOSFET. QS5K2 Datasheet

 

QS5K2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: QS5K2
   Marking Code: TR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.8 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TSMT5

 QS5K2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

QS5K2 Datasheet (PDF)

 ..1. Size:53K  rohm
 qs5k2.pdf

QS5K2 QS5K2

QS5K2 Transistors 2.5V Drive Nch+Nch MOSFET QS5K2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT51.0MAX 2.90.851.90.70.95 0.95 Features (5) (4)1) Low On-resistance. 3) Space saving, small surface mount package (TSMT5). 0~0.1(1) (2) (3)0.4 0.16 ApplicationsEach lead has same dimensionsSwitching Abbreviated symbol : K02 Packaging s

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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