JMTG050P03A Datasheet and Replacement
Type Designator: JMTG050P03A
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pd ⓘ
- Maximum Power Dissipation: 52
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 80
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 83
nS
Cossⓘ -
Output Capacitance: 871
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041
Ohm
Package:
PDFN5X6-8L
-
MOSFET ⓘ Cross-Reference Search
JMTG050P03A Datasheet (PDF)
..1. Size:1425K jiejie micro
jmtg050p03a.pdf 
-30V, -80A, 5.2m P-channel Power Trench MOSFETJMTG050P03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS -30 V 100% Vds TESTEDVGS(th)_Typ -1.7 V Halogen-free; RoHS-compliantID(@VGS=-10V) -80 A Pb-free platingRDS(ON)_Typ(@VGS=-10V 3.7 mWRDS(ON)_Typ(@VGS=-4.5V 5.2 mWApplications Load Swit
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jmtg016n04a.pdf
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jmtg060n06a.pdf
JMTG060N06ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V,90 A Load SwitchR
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jmtg060p03a.pdf
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jmtg080n04d.pdf
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jmtg062n04d.pdf
JMTG062N04DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 55A Load SwitchRDS(ON)
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jmtg075c03d.pdf
30V, 38A&-25A, 9.3m&27.7m N And P-channel Power Trench MOSFETJMTG075C03DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters N P Unit 100% UIS TestedVDSS 30 -30 V 100% Vds TestedVGS(th)_Typ 1.6 -1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 38 -25 ARDS(ON)_Typ(@VGS=10V 6.7 19.8 mWRDS(ON)_Typ(@VGS=4.5V 9.3 27.7Applications mW
9.8. Size:1358K jiejie micro
jmtg080p03a.pdf
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jmtg070n06a.pdf
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jmtg021n04a.pdf
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jmtg030p02a.pdf
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9.12. Size:1070K jiejie micro
jmtg018n03a.pdf
30V, 130A, 2m N-channel Power Trench MOSFETJMTG018N03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 130 ARDS(ON)_Typ(@VGS=10V 1.5 mWApplicationsRDS(ON)_Typ(@VGS=4.5V 2.0 mW Load Switch PWM Application P
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jmtg035n04l.pdf
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9.14. Size:1076K jiejie micro
jmtg027n04a.pdf
40V, 190A, 1.8m N-channel Power Trench MOSFETJMTG027N04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 190 ARDS(ON)_Typ(@VGS=10V 1.8 mWApplicationsRDS(ON)_Typ(@VGS=8V 2.1 mW Load Switch PWM Application P
9.15. Size:1182K jiejie micro
jmtg035n04a.pdf
40V, 100A, 3.0m N-channel Power Trench MOSFETJMTG035N04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 100 ARDS(ON)_Typ(@VGS=10V 3.0 mWApplications Load Switch PWM Application Power ManagementDG SP
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jmtg040n03a.pdf
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Datasheet: JMSL10A13GD
, JMTG016N04A
, JMTG018N03A
, JMTG021N04A
, JMTG027N04A
, JMTG030P02A
, JMTG035N04A
, JMTG035N04L
, IRF3205
, JMTG055N04A
, JMTG060N06A
, , , , , , .
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