JMTG050P03A datasheet, аналоги, основные параметры
Наименование производителя: JMTG050P03A 📄📄
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 52 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 83 ns
Cossⓘ - Выходная емкость: 871 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0041 Ohm
Тип корпуса: PDFN5X6-8L
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Аналог (замена) для JMTG050P03A
- подборⓘ MOSFET транзистора по параметрам
JMTG050P03A даташит
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