Аналоги JMTG050P03A. Основные параметры
Наименование производителя: JMTG050P03A
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 52
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 80
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 83
ns
Cossⓘ - Выходная емкость: 871
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0041
Ohm
Тип корпуса:
PDFN5X6-8L
Аналог (замена) для JMTG050P03A
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подбор ⓘ MOSFET транзистора по параметрам
JMTG050P03A даташит
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jmtg050p03a.pdf 
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jmtg021n04a.pdf 
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jmtg018n03a.pdf 
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jmtg035n04l.pdf 
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jmtg035n04a.pdf 
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jmtg040n03a.pdf 
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History: JMSL1006AK
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