JMTG050P03A
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JMTG050P03A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 30
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 80
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 83
nS
Cossⓘ - Capacitancia
de salida: 871
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0041
Ohm
Paquete / Cubierta:
PDFN5X6-8L
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JMTG050P03A
Datasheet (PDF)
..1. Size:1425K jiejie micro
jmtg050p03a.pdf 
-30V, -80A, 5.2m P-channel Power Trench MOSFETJMTG050P03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS -30 V 100% Vds TESTEDVGS(th)_Typ -1.7 V Halogen-free; RoHS-compliantID(@VGS=-10V) -80 A Pb-free platingRDS(ON)_Typ(@VGS=-10V 3.7 mWRDS(ON)_Typ(@VGS=-4.5V 5.2 mWApplications Load Swit
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jmtg060p03a.pdf
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jmtg075c03d.pdf
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jmtg080p03a.pdf
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jmtg030p02a.pdf
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jmtg018n03a.pdf
30V, 130A, 2m N-channel Power Trench MOSFETJMTG018N03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 130 ARDS(ON)_Typ(@VGS=10V 1.5 mWApplicationsRDS(ON)_Typ(@VGS=4.5V 2.0 mW Load Switch PWM Application P
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jmtg035n04l.pdf
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jmtg027n04a.pdf
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9.15. Size:1182K jiejie micro
jmtg035n04a.pdf
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9.16. Size:515K jiejie micro
jmtg040n03a.pdf
JMTG040N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 30V, 80A Load SwitchRDS(ON)
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