JFAM18N50C Datasheet and Replacement
Type Designator: JFAM18N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 255 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO3P
JFAM18N50C substitution
JFAM18N50C Datasheet (PDF)
jfam18n50c.pdf

JFAM18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and
Datasheet: MMF80R900PCTH , MMF80R900QZTH , MMF80R900PBTH , MMFT60R195PCTH , S40N14S , HY3408 , STP1806 , YMP230N55 , IRFP260 , JFAM20N50C , JFAM20N50D , JFAM20N50E , JFAM20N60C , JFAM20N60D , JFAM20N60E , JFAM20N65C , JFAM20N65E .
History: HM4407A | MMF60R580QTH | L2N7002FLT1G | MMF65R600QTH | KPE4403A2 | STS65R190SS2 | MMF80R450PBTH
Keywords - JFAM18N50C MOSFET datasheet
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History: HM4407A | MMF60R580QTH | L2N7002FLT1G | MMF65R600QTH | KPE4403A2 | STS65R190SS2 | MMF80R450PBTH



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