All MOSFET. JFAM18N50C Datasheet

 

JFAM18N50C Datasheet and Replacement


   Type Designator: JFAM18N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 255 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO3P
 

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JFAM18N50C Datasheet (PDF)

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JFAM18N50C

JFAM18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and

Datasheet: MMF80R900PCTH , MMF80R900QZTH , MMF80R900PBTH , MMFT60R195PCTH , S40N14S , HY3408 , STP1806 , YMP230N55 , AO3400 , JFAM20N50C , JFAM20N50D , JFAM20N50E , JFAM20N60C , JFAM20N60D , JFAM20N60E , JFAM20N65C , JFAM20N65E .

History: OSS65R340DF | SI2301ADS-T1 | NCE01P13K | JFAM20N50E | R6020ENJ | SC8205S | BLM7002

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