JFAM18N50C PDF and Equivalents Search

 

JFAM18N50C Specs and Replacement

Type Designator: JFAM18N50C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 255 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: TO3P

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JFAM18N50C datasheet

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JFAM18N50C

JFAM18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and ... See More ⇒

Detailed specifications: MMF80R900PCTH, MMF80R900QZTH, MMF80R900PBTH, MMFT60R195PCTH, S40N14S, HY3408, STP1806, YMP230N55, AO3401, JFAM20N50C, JFAM20N50D, JFAM20N50E, JFAM20N60C, JFAM20N60D, JFAM20N60E, JFAM20N65C, JFAM20N65E

Keywords - JFAM18N50C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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