JFFM10N60C Todos los transistores

 

JFFM10N60C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JFFM10N60C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 39 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 136 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.83 Ohm
   Paquete / Cubierta: TO220F
 

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JFFM10N60C Datasheet (PDF)

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 jfpc10n60c jffm10n60c.pdf pdf_icon

JFFM10N60C

JFPC10N60C JFFM10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.68@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

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 jfpc10n80c jffm10n80c.pdf pdf_icon

JFFM10N60C

JFPC10N80C JFFM10N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER

 9.1. Size:889K  jiaensemi
 jfpc18n50c jffm18n50c.pdf pdf_icon

JFFM10N60C

JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 9.2. Size:908K  jiaensemi
 jfpc16n50c jffm16n50c.pdf pdf_icon

JFFM10N60C

JFPC16N50C JFFM16N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 16A, 500V, RDS(on)typ. = 0.33@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

MOSTRAR MÁS

Otros transistores... JFFM3N150C , JFFM7N90C , JFHM20N60C , JFHM20N60E , JFHM30N50P , JFHM50N50C , JFHM9N150E , JFPC10N60C , 75N75 , JFPC10N60CI , JFPC10N65C , JFFC10N65C , JFPC10N65CI , JFPC10N65D , JFPC10N80C , JFFM10N80C , JFPC11N50C .

History: SHDC224701 | IRF9Z24PBF | RU40191S | 2SK1581 | FCU600N65S3R0 | 3N189

 

 
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