JFFM16N50C Todos los transistores

 

JFFM16N50C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: JFFM16N50C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO220F
 
   - Selección ⓘ de transistores por parámetros

 

JFFM16N50C Datasheet (PDF)

 ..1. Size:908K  jiaensemi
 jfpc16n50c jffm16n50c.pdf pdf_icon

JFFM16N50C

JFPC16N50C JFFM16N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 16A, 500V, RDS(on)typ. = 0.33@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 9.1. Size:889K  jiaensemi
 jfpc18n50c jffm18n50c.pdf pdf_icon

JFFM16N50C

JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 9.2. Size:843K  jiaensemi
 jfpc10n60c jffm10n60c.pdf pdf_icon

JFFM16N50C

JFPC10N60C JFFM10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.68@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 9.3. Size:995K  jiaensemi
 jffm13n50e.pdf pdf_icon

JFFM16N50C

JFFM13N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

MOSTRAR MÁS

Otros transistores... JFPC12N65D , JFPC13N50C , JFFM13N50C , JFPC13N60CI , JFPC13N65C , JFFC13N65C , JFPC13N65CI , JFPC16N50C , EMB04N03H , JFPC18N50C , JFFM18N50C , JFPC18N60C , JFFM18N60C , JFPC18N60CI , JFPC18N65C , JFFC18N65C , JFPC18N65CI .

 

 
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