JFFM16N50C - аналоги и даташиты транзистора

 

JFFM16N50C - Даташиты. Аналоги. Основные параметры


   Наименование производителя: JFFM16N50C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 170 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.45 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для JFFM16N50C

   - подбор ⓘ MOSFET транзистора по параметрам

 

JFFM16N50C Datasheet (PDF)

 ..1. Size:908K  jiaensemi
 jfpc16n50c jffm16n50c.pdf pdf_icon

JFFM16N50C

JFPC16N50C JFFM16N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 16A, 500V, RDS(on)typ. = 0.33@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 9.1. Size:889K  jiaensemi
 jfpc18n50c jffm18n50c.pdf pdf_icon

JFFM16N50C

JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 9.2. Size:843K  jiaensemi
 jfpc10n60c jffm10n60c.pdf pdf_icon

JFFM16N50C

JFPC10N60C JFFM10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.68@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

 9.3. Size:995K  jiaensemi
 jffm13n50e.pdf pdf_icon

JFFM16N50C

JFFM13N50E 500V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... JFPC12N65D , JFPC13N50C , JFFM13N50C , JFPC13N60CI , JFPC13N65C , JFFC13N65C , JFPC13N65CI , JFPC16N50C , EMB04N03H , JFPC18N50C , JFFM18N50C , JFPC18N60C , JFFM18N60C , JFPC18N60CI , JFPC18N65C , JFFC18N65C , JFPC18N65CI .

History: RF1S70N06 | KHB1D0N60G | KIA10N80H-220F

 

 
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