FDMC8882 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMC8882
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 18 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0143 Ohm
Paquete / Cubierta: POWER33
Búsqueda de reemplazo de MOSFET FDMC8882
FDMC8882 Datasheet (PDF)
fdmc8882.pdf
September 2010FDMC8882N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m Features General Description Max rDS(on) = 14.3 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8.3 Abeen especially tailored to minimize the on-state resistance. This Hi
fdmc8884.pdf
October 2010FDMC8884N-Channel Power Trench MOSFET 30 V, 15 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7.2 Abeen especially tailored to minimize the on-state resistance. This High per
fdmc8878.pdf
December 2010FDMC8878N-Channel Power Trench MOSFET 30V, 16.5A, 14m Features General Description Max rDS(on) = 14m at VGS = 10V, ID = 9.6AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 17m at VGS = 4.5V, ID = 8.7Aprocess. It has been optimized for power management Low Profile - 0.8 mm max in MLP 3.3X3.
fdmc8854.pdf
June 2014FDMC8854N-Channel Power Trench MOSFET 30V, 15A, 5.7mFeatures General Description Max rDS(on) = 5.7m at VGS = 10V, ID = 15AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 7.6m at VGS = 4.5V, ID = 13Aprocess. It has been optimized for power management Low Profile - 1mm max in Power 33applica
Otros transistores... FDMC86240 , FDMC86244 , FDMC86324 , FDMC8651 , STP454 , FDMC86520L , FDMC8878 , STP4410 , AON7408 , STP423S , FDMC8884 , STP35N10 , FDME1023PZT , FDME1024NZT , FDME1034CZT , STP15L01F , FDME410NZT .
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