Справочник MOSFET. FDMC8882

 

FDMC8882 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDMC8882
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 18 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 14 nC
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0143 Ohm
   Тип корпуса: POWER33
 

 Аналог (замена) для FDMC8882

   - подбор ⓘ MOSFET транзистора по параметрам

 

FDMC8882 Datasheet (PDF)

 ..1. Size:339K  fairchild semi
 fdmc8882.pdf pdf_icon

FDMC8882

September 2010FDMC8882N-Channel Power Trench MOSFET 30 V, 16 A, 14.3 m Features General Description Max rDS(on) = 14.3 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 22.5 m at VGS = 4.5 V, ID = 8.3 Abeen especially tailored to minimize the on-state resistance. This Hi

 7.1. Size:347K  fairchild semi
 fdmc8884.pdf pdf_icon

FDMC8882

October 2010FDMC8884N-Channel Power Trench MOSFET 30 V, 15 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 30 m at VGS = 4.5 V, ID = 7.2 Abeen especially tailored to minimize the on-state resistance. This High per

 8.1. Size:244K  fairchild semi
 fdmc8878.pdf pdf_icon

FDMC8882

December 2010FDMC8878N-Channel Power Trench MOSFET 30V, 16.5A, 14m Features General Description Max rDS(on) = 14m at VGS = 10V, ID = 9.6AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 17m at VGS = 4.5V, ID = 8.7Aprocess. It has been optimized for power management Low Profile - 0.8 mm max in MLP 3.3X3.

 8.2. Size:354K  fairchild semi
 fdmc8854.pdf pdf_icon

FDMC8882

June 2014FDMC8854N-Channel Power Trench MOSFET 30V, 15A, 5.7mFeatures General Description Max rDS(on) = 5.7m at VGS = 10V, ID = 15AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 7.6m at VGS = 4.5V, ID = 13Aprocess. It has been optimized for power management Low Profile - 1mm max in Power 33applica

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FDMC86240 , FDMC86244 , FDMC86324 , FDMC8651 , STP454 , FDMC86520L , FDMC8878 , STP4410 , 2N7000 , STP423S , FDMC8884 , STP35N10 , FDME1023PZT , FDME1024NZT , FDME1034CZT , STP15L01F , FDME410NZT .

History: PHX3N40E

 

 
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