FDME1023PZT Todos los transistores

 

FDME1023PZT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDME1023PZT

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.4 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 2.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.142 Ohm

Empaquetado / Estuche: MICROFET

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FDME1023PZT Datasheet (PDF)

1.1. fdme1023pzt.pdf Size:233K _fairchild_semi

FDME1023PZT
FDME1023PZT

July 2010 FDME1023PZT Dual P-Channel PowerTrench MOSFET -20 V, -2.6 A, 142 m? Features General Description This device is designed specifically as a single package solution Max rDS(on) = 142 m? at VGS = -4.5 V, ID = -2.3 A for the battery charges switch in cellular handset and other Max rDS(on) = 213 m? at VGS = -2.5 V, ID = -1.8 A ultra-portable applications. It features two indepe

3.1. fdme1024nzt.pdf Size:263K _fairchild_semi

FDME1023PZT
FDME1023PZT

July 2010 FDME1024NZT Dual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 m? Features General Description Max rDS(on) = 66 m? at VGS = 4.5 V, ID = 3.4 A This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other Max rDS(on) = 86 m? at VGS = 2.5 V, ID = 2.9 A ultra-portable applications. It features two independent Ma

 4.1. fdme1034czt.pdf Size:306K _fairchild_semi

FDME1023PZT
FDME1023PZT

July 2010 FDME1034CZT Complementary PowerTrench MOSFET N-channel: 20 V, 3.8 A, 66 m? P-channel: -20 V, -2.6 A, 142 m? Features General Description This device is designed specifically as a single package solution Q1: N-Channel for a DC/DC Switching MOSFET in cellular handset and other Max rDS(on) = 66 m? at VGS = 4.5 V, ID = 3.4 A ultra-portable applications. It features an indepen

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