FDME1023PZT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDME1023PZT
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.142 Ohm
Paquete / Cubierta: MICROFET

Búsqueda de reemplazo de MOSFET FDME1023PZT

FDME1023PZT Datasheet (PDF)

..1. Size:233K fairchild semi
fdme1023pzt.pdf

July 2010FDME1023PZTDual P-Channel PowerTrench MOSFET -20 V, -2.6 A, 142 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 142 m at VGS = -4.5 V, ID = -2.3 Afor the battery charges switch in cellular handset and other Max rDS(on) = 213 m at VGS = -2.5 V, ID = -1.8 Aultra-portable applications. It features two

..2. Size:335K onsemi
fdme1023pzt.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

7.1. Size:263K fairchild semi
fdme1024nzt.pdf

July 2010FDME1024NZTDual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 mFeatures General Description Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other Max rDS(on) = 86 m at VGS = 2.5 V, ID = 2.9 Aultra-portable applications. It features two independe

8.1. Size:306K fairchild semi
fdme1034czt.pdf

July 2010FDME1034CZTComplementary PowerTrench MOSFET N-channel: 20 V, 3.8 A, 66 m P-channel: -20 V, -2.6 A, 142 mFeatures General DescriptionThis device is designed specifically as a single package solution Q1: N-Channelfor a DC/DC Switching MOSFET in cellular handset and other Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 Aultra-portable applications. It features

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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