FDME1023PZT PDF and Equivalents Search

 

FDME1023PZT Specs and Replacement

Type Designator: FDME1023PZT

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.142 Ohm

Package: MICROFET

FDME1023PZT substitution

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FDME1023PZT datasheet

 ..1. Size:233K  fairchild semi
fdme1023pzt.pdf pdf_icon

FDME1023PZT

July 2010 FDME1023PZT Dual P-Channel PowerTrench MOSFET -20 V, -2.6 A, 142 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 142 m at VGS = -4.5 V, ID = -2.3 A for the battery charges switch in cellular handset and other Max rDS(on) = 213 m at VGS = -2.5 V, ID = -1.8 A ultra-portable applications. It features two... See More ⇒

 ..2. Size:335K  onsemi
fdme1023pzt.pdf pdf_icon

FDME1023PZT

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.1. Size:263K  fairchild semi
fdme1024nzt.pdf pdf_icon

FDME1023PZT

July 2010 FDME1024NZT Dual N-Channel PowerTrench MOSFET 20 V, 3.8 A, 66 m Features General Description Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other Max rDS(on) = 86 m at VGS = 2.5 V, ID = 2.9 A ultra-portable applications. It features two independe... See More ⇒

 8.1. Size:306K  fairchild semi
fdme1034czt.pdf pdf_icon

FDME1023PZT

July 2010 FDME1034CZT Complementary PowerTrench MOSFET N-channel 20 V, 3.8 A, 66 m P-channel -20 V, -2.6 A, 142 m Features General Description This device is designed specifically as a single package solution Q1 N-Channel for a DC/DC Switching MOSFET in cellular handset and other Max rDS(on) = 66 m at VGS = 4.5 V, ID = 3.4 A ultra-portable applications. It features... See More ⇒

Detailed specifications: STP454, FDMC86520L, FDMC8878, STP4410, FDMC8882, STP423S, FDMC8884, STP35N10, IRF9540N, FDME1024NZT, FDME1034CZT, STP15L01F, FDME410NZT, FDME510PZT, FDML7610S, STM9930A, FDMQ8203

Keywords - FDME1023PZT MOSFET specs

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