S80N18RP Todos los transistores

 ..1. Size:2304K  1
 s80n18r s80n18s s80n18rn s80n18rp.pdf

S80N18R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=80V,ID=180A DC Motor Control Rds(on)(typ)=3m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D S

 ..2. Size:2304K  cn si-tech
 s80n18r s80n18s s80n18rn s80n18rp.pdf

S80N18R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=80V,ID=180A DC Motor Control Rds(on)(typ)=3m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D S

 7.1. Size:448K  1
 s80n18r s80n18s.pdf

SI-TECH SEMICONDUCTOR CO.,LTD S80N18R/S Electrical Characteristics (TC=25 unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 80 - - V IDSS Drain-Source Leakage Current VDS=78V, VGS=0V - - 1 uA IGSS Gate Leakage Current, Forward VGS=25V, VDS=0V - - 100 nA Gate Leakage Current, Reverse VGS=-25V, VDS=

 9.1. Size:495K  1
 s80n10r s80n10s.pdf

SI-TECH SEMICONDUCTOR CO.,LTD S80N10R/S N-Channel MOSFET Features 80V,100A,Rds(on)(typ)=5.8m @Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-st

 9.2. Size:1114K  jilin sino
 jcs80n10i.pdf

N N-CHANNEL MOSFET JCS80N10I MAIN CHARACTERISTICS Package ID 80A VDSS 100V Rdson-typ - 9.5m (@Vgs=10V Qg-typ 70nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive ap

 9.3. Size:2299K  cn si-tech
 s80n10r s80n10s s80n10rn s80n10rp.pdf

S80N10R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFET Features Applications VDS=80V,ID=100A DC Motor Control Rds(on)(typ)=6.3m @Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description D D G G G G G D D D

 9.4. Size:914K  cn hmsemi
 hms80n10ka.pdf

HMS80N10KA N-Channel Super Trench Power MOSFET Description The HMS80N10AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

 9.5. Size:995K  cn hmsemi
 hms80n10.pdf

HMS80N10 N-Channel Super Trench Power MOSFET Description The HMS80N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat

 9.6. Size:574K  cn hmsemi
 hms80n10al.pdf

HMS80N10AL N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif

 9.7. Size:725K  cn hmsemi
 hms80n10d.pdf

HMS80N10D N-Channel Super Trench Power MOSFET Description The HMS80N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific