S80N18RP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: S80N18RP
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 250 W
Предельно допустимое напряжение сток-исток |Uds|: 80 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 3.6 V
Максимально допустимый постоянный ток стока |Id|: 180 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 178 nC
Время нарастания (tr): 18 ns
Выходная емкость (Cd): 1075 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0036 Ohm
Тип корпуса: TO220
S80N18RP Datasheet (PDF)
s80n18r s80n18s s80n18rn s80n18rp.pdf
S80N18R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=80V,ID=180A DC Motor Control Rds(on)(typ)=3m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD S
s80n18r s80n18s s80n18rn s80n18rp.pdf
S80N18R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=80V,ID=180A DC Motor Control Rds(on)(typ)=3m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD S
s80n18r s80n18s.pdf
SI-TECH SEMICONDUCTOR CO.,LTD S80N18R/S Electrical Characteristics (TC=25 unless otherwise noted)Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 80 - - V IDSS Drain-Source Leakage Current VDS=78V, VGS=0V - - 1 uA IGSS Gate Leakage Current, Forward VGS=25V, VDS=0V - - 100 nA Gate Leakage Current, Reverse VGS=-25V, VDS=
s80n10r s80n10s.pdf
SI-TECH SEMICONDUCTOR CO.,LTD S80N10R/S N-Channel MOSFET Features 80V,100A,Rds(on)(typ)=5.8m @Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Techs advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-st
jcs80n10i.pdf
N N-CHANNEL MOSFET JCS80N10I MAIN CHARACTERISTICS Package ID 80A VDSS 100V Rdson-typ - 9.5m (@Vgs=10V Qg-typ 70nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive ap
s80n10r s80n10s s80n10rn s80n10rp.pdf
S80N10R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=80V,ID=100A DC Motor Control Rds(on)(typ)=6.3m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD
hms80n10ka.pdf
HMS80N10KAN-Channel Super Trench Power MOSFET Description The HMS80N10AL uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif
hms80n10.pdf
HMS80N10N-Channel Super Trench Power MOSFET Description The HMS80N10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectificat
hms80n10al.pdf
HMS80N10ALN-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectif
hms80n10d.pdf
HMS80N10DN-Channel Super Trench Power MOSFET Description The HMS80N10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific
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