SRC60R017FBT4G Todos los transistores

 

SRC60R017FBT4G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRC60R017FBT4G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 595 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 291 nC
   trⓘ - Tiempo de subida: 21.6 nS
   Cossⓘ - Capacitancia de salida: 222 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: TO247-4
 

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SRC60R017FBT4G Datasheet (PDF)

 ..1. Size:1326K  sanrise-tech
 src60r017fbt4g.pdf pdf_icon

SRC60R017FBT4G

Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral Description SymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 3.1. Size:1422K  sanrise-tech
 src60r017fb.pdf pdf_icon

SRC60R017FBT4G

Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral DescriptionSymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.1. Size:1038K  1
 src60r078b.pdf pdf_icon

SRC60R017FBT4G

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 7.2. Size:643K  1
 src60r090b.pdf pdf_icon

SRC60R017FBT4G

Datasheet 90m, 600V, Super Junction N-Channel Power MOSFET SRC60R090B General Description Symbol The Sanrise SRC60R090B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

MOSTRAR MÁS

Otros transistores... EMB09A3HP , PJF4NA65A , QM3090M6 , S80N18R , S80N18S , S80N18RN , S80N18RP , SRC60R017FB , 4N60 , SRC60R022FBS , SRC60R022FBST4G , SRC60R029FBS , SRC60R030BS , SRC60R030FBS , SRC60R037B , SRC60R045FB , SRC60R064S .

 

 
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