Справочник MOSFET. SRC60R017FBT4G

 

SRC60R017FBT4G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SRC60R017FBT4G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 595 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 21.6 ns
   Cossⓘ - Выходная емкость: 222 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
   Тип корпуса: TO247-4
     - подбор MOSFET транзистора по параметрам

 

SRC60R017FBT4G Datasheet (PDF)

 ..1. Size:1326K  sanrise-tech
src60r017fbt4g.pdfpdf_icon

SRC60R017FBT4G

Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral Description SymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 3.1. Size:1422K  sanrise-tech
src60r017fb.pdfpdf_icon

SRC60R017FBT4G

Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral DescriptionSymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.1. Size:1038K  1
src60r078b.pdfpdf_icon

SRC60R017FBT4G

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 7.2. Size:643K  1
src60r090b.pdfpdf_icon

SRC60R017FBT4G

Datasheet 90m, 600V, Super Junction N-Channel Power MOSFET SRC60R090B General Description Symbol The Sanrise SRC60R090B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

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History: IXTQ76N25T | IXTT360N055T2 | WMK18N50C4 | STP12N50M2 | IRFB7534 | WMO25P03TS | KRF7401

 

 
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