SRC60R022FBST4G Todos los transistores

 

SRC60R022FBST4G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRC60R022FBST4G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 657.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 115 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 168 nC
   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 533 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO247-4

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SRC60R022FBST4G Datasheet (PDF)

 0.1. Size:1172K  sanrise-tech
src60r022fbst4g.pdf

SRC60R022FBST4G
SRC60R022FBST4G

Datasheet22m, 600V, Super Junction N-Channel Power MOSFET SRC60R022FBSGeneral Description SymbolThe Sanrise SRC60R022FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

 2.1. Size:1263K  sanrise-tech
src60r022fbs.pdf

SRC60R022FBST4G
SRC60R022FBST4G

Datasheet22m, 600V, Super Junction N-Channel Power MOSFET SRC60R022FBSGeneral Description SymbolThe Sanrise SRC60R022FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

 6.1. Size:1904K  sanrise-tech
src60r029fbs.pdf

SRC60R022FBST4G
SRC60R022FBST4G

Datasheet29m, 600V, Super Junction N-Channel Power MOSFET SRC60R029FBSGeneral Description SymbolThe Sanrise SRC60R029FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

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