SRC60R078BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC60R078BS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 255 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 42 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 28.4 nS
Cossⓘ - Capacitancia de salida: 69.4 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
Paquete / Cubierta: TO247 TO220 TO263
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SRC60R078BS Datasheet (PDF)
src60r078bs.pdf

Datasheet78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078BSGeneral Description SymbolThe Sanrise SRC60R078BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src60r078b.pdf

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r078b.pdf

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r075bs.pdf

Preliminary Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior pow
Otros transistores... SRC60R045FB , SRC60R064S , SRC60R068BS , SRC60R068BSTL , SRC60R075BS , SRC60R075BSD88 , SRC60R075FBS , SRC60R078B , STF13NM60N , SRC60R090BS , SRC60R100B , SRC60R100BS , SRC60R108B , SRC60R125B , SRC60R145B , SRC60R145BS , SRC60R160BS .
History: TK10E60W | STFI40N60M2 | SDF034 | WVM4N50 | STT3457P | KCY3303S | TMU2N40
History: TK10E60W | STFI40N60M2 | SDF034 | WVM4N50 | STT3457P | KCY3303S | TMU2N40



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