All MOSFET. SRC60R078BS Datasheet

 

SRC60R078BS MOSFET. Datasheet pdf. Equivalent


   Type Designator: SRC60R078BS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 255 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 104 nC
   trⓘ - Rise Time: 28.4 nS
   Cossⓘ - Output Capacitance: 69.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.078 Ohm
   Package: TO247 TO220 TO263

 SRC60R078BS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SRC60R078BS Datasheet (PDF)

 ..1. Size:1771K  sanrise-tech
 src60r078bs.pdf

SRC60R078BS SRC60R078BS

Datasheet78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078BSGeneral Description SymbolThe Sanrise SRC60R078BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 4.1. Size:1038K  1
 src60r078b.pdf

SRC60R078BS SRC60R078BS

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 4.2. Size:1038K  sanrise-tech
 src60r078b.pdf

SRC60R078BS SRC60R078BS

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 6.1. Size:619K  sanrise-tech
 src60r075bs.pdf

SRC60R078BS SRC60R078BS

Preliminary Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior pow

 6.2. Size:1146K  sanrise-tech
 src60r075bsd88.pdf

SRC60R078BS SRC60R078BS

Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 6.3. Size:1572K  sanrise-tech
 src60r075fbs.pdf

SRC60R078BS SRC60R078BS

Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075FBSGeneral Description SymbolThe Sanrise SRC60R075FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK2532

 

 
Back to Top