SRC60R145BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SRC60R145BS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 178 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.3 V
   Qgⓘ - Carga de la puerta: 40.4 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 129.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.145 Ohm
   Paquete / Cubierta: TO247 TO220 TO263

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SRC60R145BS Datasheet (PDF)

..1. Size:2173K sanrise-tech
src60r145bs.pdf

Datasheet145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145BSGeneral Description SymbolThe Sanrise SRC60R145BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

4.1. Size:1155K sanrise-tech
src60r145b.pdf

Datasheet 145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145B General Description Symbol The Sanrise SRC60R145B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

7.1. Size:1325K sanrise-tech
src60r160fb.pdf

Datasheet 160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160FB General Description Symbol The Sanrise SRC60R160FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

7.2. Size:1049K sanrise-tech
src60r100b.pdf

Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BGeneral Description SymbolThe Sanrise SRC60R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

7.3. Size:1623K sanrise-tech
src60r108b.pdf

Datasheet 108m, 600V, Super Junction N-Channel Power MOSFET SRC60R108B General Description Symbol The Sanrise SRC60R108B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

7.4. Size:1051K sanrise-tech
src60r100bs.pdf

Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BSGeneral Description SymbolThe Sanrise SRC60R100BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

7.5. Size:1319K sanrise-tech
src60r125b.pdf

Datasheet 125m, 600V, Super Junction N-Channel Power MOSFET SRC60R125B General Description Symbol The Sanrise SRC60R125B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

7.6. Size:1572K sanrise-tech
src60r160bs.pdf

Datasheet160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160BSGeneral Description SymbolThe Sanrise SRC60R160BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

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