SRC60R145BS. Аналоги и основные параметры
Наименование производителя: SRC60R145BS
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 178 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 129.6 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.145 Ohm
Тип корпуса: TO247 TO220 TO263
Аналог (замена) для SRC60R145BS
- подборⓘ MOSFET транзистора по параметрам
SRC60R145BS даташит
src60r145bs.pdf
Datasheet 145m , 600V, Super Junction N-Channel Power MOSFET SRC60R145BS General Description Symbol The Sanrise SRC60R145BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src60r145b.pdf
Datasheet 145m , 600V, Super Junction N-Channel Power MOSFET SRC60R145B General Description Symbol The Sanrise SRC60R145B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r160fb.pdf
Datasheet 160m , 600V, Super Junction N-Channel Power MOSFET SRC60R160FB General Description Symbol The Sanrise SRC60R160FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r100b.pdf
Datasheet 100m , 600V, Super Junction N-Channel Power MOSFET SRC60R100B General Description Symbol The Sanrise SRC60R100B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density a
Другие MOSFET... SRC60R078B , SRC60R078BS , SRC60R090BS , SRC60R100B , SRC60R100BS , SRC60R108B , SRC60R125B , SRC60R145B , AO3407 , SRC60R160BS , SRC60R160FB , SRC60R200 , SRC60R230B , SRC60R360 , SRC60R360B , SRC60R420 , SRC60R450B .
History: S60N15RP | JMSL1040AY | 2SK1057 | STF18NM60ND | FDB075N15AF085 | STFU9N65M2 | TPM7002BKM
History: S60N15RP | JMSL1040AY | 2SK1057 | STF18NM60ND | FDB075N15AF085 | STFU9N65M2 | TPM7002BKM
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