SRC60R145BS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SRC60R145BS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 178 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 40.4 nC
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 129.6 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.145 Ohm
Тип корпуса: TO247 TO220 TO263
- подбор MOSFET транзистора по параметрам
SRC60R145BS Datasheet (PDF)
src60r145bs.pdf

Datasheet145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145BSGeneral Description SymbolThe Sanrise SRC60R145BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src60r145b.pdf

Datasheet 145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145B General Description Symbol The Sanrise SRC60R145B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r160fb.pdf

Datasheet 160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160FB General Description Symbol The Sanrise SRC60R160FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r100b.pdf

Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BGeneral Description SymbolThe Sanrise SRC60R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 50N60G-TM3-T
History: 50N60G-TM3-T



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