SRC65R290E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC65R290E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 86.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 53.3 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
Búsqueda de reemplazo de SRC65R290E MOSFET
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SRC65R290E datasheet
src65r290e.pdf
Datasheet 290m , 650V, Super Junction N-Channel Power MOSFET SRC65R290E General Description Symbol The Sanrise SRC65R290E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src65r220bs.pdf
Datasheet 220m , 650V, Super Junction N-Channel Power MOSFET SRC65R220BS General Description Symbol The Sanrise SRC65R220BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r230bs.pdf
Datasheet 230m , 650V, Super Junction N-Channel Power MOSFET SRC65R230BS General Description Symbol The Sanrise SRC65R230BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r220m2.pdf
Datasheet 220m , 650V, Super Junction N-Channel Power MOSFET SRC65R220M2 General Description Symbol The Sanrise SRC65R220M2 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
Otros transistores... SRC65R145B, SRC65R170B, SRC65R180, SRC65R1K3ES, SRC65R220, SRC65R220BS, SRC65R220M2, SRC65R230BS, IRF3205, SRC65R330B, SRC65R330EC, SRC65R340EC, SRC65R600EC, SRC65R650, SRC65R650B, SRC65R800, SRC65R800E
History: RJK0631JPD | RS1E240BN
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