SRC65R290E. Аналоги и основные параметры
Наименование производителя: SRC65R290E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 86.8 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 53.3 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.29 Ohm
Аналог (замена) для SRC65R290E
- подборⓘ MOSFET транзистора по параметрам
SRC65R290E даташит
src65r290e.pdf
Datasheet 290m , 650V, Super Junction N-Channel Power MOSFET SRC65R290E General Description Symbol The Sanrise SRC65R290E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src65r220bs.pdf
Datasheet 220m , 650V, Super Junction N-Channel Power MOSFET SRC65R220BS General Description Symbol The Sanrise SRC65R220BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r230bs.pdf
Datasheet 230m , 650V, Super Junction N-Channel Power MOSFET SRC65R230BS General Description Symbol The Sanrise SRC65R230BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r220m2.pdf
Datasheet 220m , 650V, Super Junction N-Channel Power MOSFET SRC65R220M2 General Description Symbol The Sanrise SRC65R220M2 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
Другие IGBT... SRC65R145B, SRC65R170B, SRC65R180, SRC65R1K3ES, SRC65R220, SRC65R220BS, SRC65R220M2, SRC65R230BS, IRF3205, SRC65R330B, SRC65R330EC, SRC65R340EC, SRC65R600EC, SRC65R650, SRC65R650B, SRC65R800, SRC65R800E
History: 4N80G-TM3-T | TMU6N65G | RJK4034DJE
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Список транзисторов
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