SRT03N011L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRT03N011L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 250 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 2400 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0011 Ohm
Encapsulados: PDFN5X6
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SRT03N011L datasheet
srt03n011l.pdf
Datasheet 1.1m , 30V, N-Channel Power MOSFET SRT03N011L General Description Symbol The Sanrise SRT03N011L is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding e
srt03n010ld56.pdf
Datasheet 1.0m , 30V, N-Channel Power MOSFET SRT03N010LD56TR-G General Description Symbol The Sanrise SRT03N010LD56TR-G uses Drain 5,6,7,8 advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4 driver, BMS, DCDC converter and power management. Source 1,2,3 The SRT03N010LD56T
srt03n010ld56tr-gs.pdf
Datasheet 1.0m , 30V, N-Channel Power MOSFET SRT03N010LD56TR-GS General Description Symbol The Sanrise SRT03N010LD56TR-GS uses Drain 5,6,7,8 advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4 driver, BMS, DCDC converter and power management. Source 1,2,3 The SRT03N010LD5
srt03n016l.pdf
Datasheet 1.6m , 30V, N-Channel Power MOSFET SRT03N016L General Description Symbol The Sanrise SRT03N016L is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding e
Otros transistores... SRH03P098LD33TR-G, SRH03P142LMTR-G, SRH03P142LD33TR-G, SRH03P142LDTR-G, SRH04N260L, SRH04P500L, SRT03N010LD56, SRT03N010LD56TR-GS, 7N65, SRT03N016L, SRT03N020L, SRT03N023H, SRT03N023L, SRT03N050LD56TR-G, SRT045N012H, SRT045N012HS2, SRT045N012HTC-GS
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