SRT03N011L. Аналоги и основные параметры

Наименование производителя: SRT03N011L

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 250 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 2400 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0011 Ohm

Тип корпуса: PDFN5X6

Аналог (замена) для SRT03N011L

- подборⓘ MOSFET транзистора по параметрам

 

SRT03N011L даташит

 ..1. Size:915K  sanrise-tech
 srt03n011l.pdf pdf_icon

SRT03N011L

Datasheet 1.1m , 30V, N-Channel Power MOSFET SRT03N011L General Description Symbol The Sanrise SRT03N011L is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding e

 6.1. Size:1187K  sanrise-tech
 srt03n010ld56.pdf pdf_icon

SRT03N011L

Datasheet 1.0m , 30V, N-Channel Power MOSFET SRT03N010LD56TR-G General Description Symbol The Sanrise SRT03N010LD56TR-G uses Drain 5,6,7,8 advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4 driver, BMS, DCDC converter and power management. Source 1,2,3 The SRT03N010LD56T

 6.2. Size:1146K  sanrise-tech
 srt03n010ld56tr-gs.pdf pdf_icon

SRT03N011L

Datasheet 1.0m , 30V, N-Channel Power MOSFET SRT03N010LD56TR-GS General Description Symbol The Sanrise SRT03N010LD56TR-GS uses Drain 5,6,7,8 advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4 driver, BMS, DCDC converter and power management. Source 1,2,3 The SRT03N010LD5

 6.3. Size:1387K  sanrise-tech
 srt03n016l.pdf pdf_icon

SRT03N011L

Datasheet 1.6m , 30V, N-Channel Power MOSFET SRT03N016L General Description Symbol The Sanrise SRT03N016L is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding e

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SRH03P098LD33TR-G, SRH03P142LMTR-G, SRH03P142LD33TR-G, SRH03P142LDTR-G, SRH04N260L, SRH04P500L, SRT03N010LD56, SRT03N010LD56TR-GS, 7N65, SRT03N016L, SRT03N020L, SRT03N023H, SRT03N023L, SRT03N050LD56TR-G, SRT045N012H, SRT045N012HS2, SRT045N012HTC-GS