SRT03N016L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRT03N016L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 163 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 800 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm

Encapsulados: PDFN5X6

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SRT03N016L datasheet

 ..1. Size:1387K  sanrise-tech
srt03n016l.pdf pdf_icon

SRT03N016L

Datasheet 1.6m , 30V, N-Channel Power MOSFET SRT03N016L General Description Symbol The Sanrise SRT03N016L is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding e

 6.1. Size:1187K  sanrise-tech
srt03n010ld56.pdf pdf_icon

SRT03N016L

Datasheet 1.0m , 30V, N-Channel Power MOSFET SRT03N010LD56TR-G General Description Symbol The Sanrise SRT03N010LD56TR-G uses Drain 5,6,7,8 advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4 driver, BMS, DCDC converter and power management. Source 1,2,3 The SRT03N010LD56T

 6.2. Size:1146K  sanrise-tech
srt03n010ld56tr-gs.pdf pdf_icon

SRT03N016L

Datasheet 1.0m , 30V, N-Channel Power MOSFET SRT03N010LD56TR-GS General Description Symbol The Sanrise SRT03N010LD56TR-GS uses Drain 5,6,7,8 advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4 driver, BMS, DCDC converter and power management. Source 1,2,3 The SRT03N010LD5

 6.3. Size:915K  sanrise-tech
srt03n011l.pdf pdf_icon

SRT03N016L

Datasheet 1.1m , 30V, N-Channel Power MOSFET SRT03N011L General Description Symbol The Sanrise SRT03N011L is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and outstanding e

Otros transistores... SRH03P142LMTR-G, SRH03P142LD33TR-G, SRH03P142LDTR-G, SRH04N260L, SRH04P500L, SRT03N010LD56, SRT03N010LD56TR-GS, SRT03N011L, IRFP250N, SRT03N020L, SRT03N023H, SRT03N023L, SRT03N050LD56TR-G, SRT045N012H, SRT045N012HS2, SRT045N012HTC-GS, SRT045N025H