SRT03N016L Todos los transistores

 

SRT03N016L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRT03N016L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 163 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 48.2 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
   Paquete / Cubierta: PDFN5X6
 

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SRT03N016L Datasheet (PDF)

 ..1. Size:1387K  sanrise-tech
 srt03n016l.pdf pdf_icon

SRT03N016L

Datasheet1.6m, 30V, N-Channel Power MOSFET SRT03N016LGeneral Description SymbolThe Sanrise SRT03N016L is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and outstanding e

 6.1. Size:1187K  sanrise-tech
 srt03n010ld56.pdf pdf_icon

SRT03N016L

Datasheet 1.0m, 30V, N-Channel Power MOSFET SRT03N010LD56TR-G General Description Symbol The Sanrise SRT03N010LD56TR-G uses Drain 5,6,7,8advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4driver, BMS, DCDC converter and power management. Source 1,2,3The SRT03N010LD56T

 6.2. Size:1146K  sanrise-tech
 srt03n010ld56tr-gs.pdf pdf_icon

SRT03N016L

Datasheet 1.0m, 30V, N-Channel Power MOSFET SRT03N010LD56TR-GS General Description Symbol The Sanrise SRT03N010LD56TR-GS uses Drain 5,6,7,8advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4driver, BMS, DCDC converter and power management. Source 1,2,3The SRT03N010LD5

 6.3. Size:915K  sanrise-tech
 srt03n011l.pdf pdf_icon

SRT03N016L

Datasheet1.1m, 30V, N-Channel Power MOSFET SRT03N011LGeneral Description SymbolThe Sanrise SRT03N011L is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and outstanding e

MOSTRAR MÁS

Otros transistores... SRH03P142LMTR-G , SRH03P142LD33TR-G , SRH03P142LDTR-G , SRH04N260L , SRH04P500L , SRT03N010LD56 , SRT03N010LD56TR-GS , SRT03N011L , AON7408 , SRT03N020L , SRT03N023H , SRT03N023L , SRT03N050LD56TR-G , SRT045N012H , SRT045N012HS2 , SRT045N012HTC-GS , SRT045N025H .

History: IRF734PBF | IRFR2407 | SIS862DN | FDB86563F085 | JSM3622 | RU5H18Q | IRFAE50

 

 
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