SRT03N016L MOSFET. Datasheet pdf. Equivalent
Type Designator: SRT03N016L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 163 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48.2 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 800 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: PDFN5X6
SRT03N016L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRT03N016L Datasheet (PDF)
srt03n016l.pdf
Datasheet1.6m, 30V, N-Channel Power MOSFET SRT03N016LGeneral Description SymbolThe Sanrise SRT03N016L is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and outstanding e
srt03n010ld56.pdf
Datasheet 1.0m, 30V, N-Channel Power MOSFET SRT03N010LD56TR-G General Description Symbol The Sanrise SRT03N010LD56TR-G uses Drain 5,6,7,8advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4driver, BMS, DCDC converter and power management. Source 1,2,3The SRT03N010LD56T
srt03n010ld56tr-gs.pdf
Datasheet 1.0m, 30V, N-Channel Power MOSFET SRT03N010LD56TR-GS General Description Symbol The Sanrise SRT03N010LD56TR-GS uses Drain 5,6,7,8advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4driver, BMS, DCDC converter and power management. Source 1,2,3The SRT03N010LD5
srt03n011l.pdf
Datasheet1.1m, 30V, N-Channel Power MOSFET SRT03N011LGeneral Description SymbolThe Sanrise SRT03N011L is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and outstanding e
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
