SRT04N012L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRT04N012L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 131 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 228 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 57 nS

Cossⓘ - Capacitancia de salida: 2000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0012 Ohm

Encapsulados: PDFN5X6

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SRT04N012L datasheet

 ..1. Size:1483K  sanrise-tech
 srt04n012l.pdf pdf_icon

SRT04N012L

Datasheet 1.2m , 40V, N-Channel Power MOSFET SRT04N012L General Description Symbol The Sanrise SRT04N012L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

 6.1. Size:970K  sanrise-tech
 srt04n016il.pdf pdf_icon

SRT04N012L

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require super

 6.2. Size:1745K  sanrise-tech
 srt04n016ls.pdf pdf_icon

SRT04N012L

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016LS General Description Symbol The Sanrise SRT04N016LS is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 6.3. Size:1350K  sanrise-tech
 srt04n016l.pdf pdf_icon

SRT04N012L

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016L General Description Symbol The Sanrise SRT04N016L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

MOSTRAR MÁS

Otros transistores... SRT03N023H, SRT03N023L, SRT03N050LD56TR-G, SRT045N012H, SRT045N012HS2, SRT045N012HTC-GS, SRT045N025H, SRT045N060H, AO3401, SRT04N016IL, SRT04N016L, SRT04N016LS2TR-GS, SRT04N016LTC-GS, SRT04N016LDTR-GS, SRT04N024L, SRT04N024LD56TR-GS, SRT04N037L