SRT04N012L Specs and Replacement

Type Designator: SRT04N012L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 131 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 228 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 2000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm

Package: PDFN5X6

SRT04N012L substitution

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SRT04N012L datasheet

 ..1. Size:1483K  sanrise-tech
 srt04n012l.pdf pdf_icon

SRT04N012L

Datasheet 1.2m , 40V, N-Channel Power MOSFET SRT04N012L General Description Symbol The Sanrise SRT04N012L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous... See More ⇒

 6.1. Size:970K  sanrise-tech
 srt04n016il.pdf pdf_icon

SRT04N012L

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require super... See More ⇒

 6.2. Size:1745K  sanrise-tech
 srt04n016ls.pdf pdf_icon

SRT04N012L

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016LS General Description Symbol The Sanrise SRT04N016LS is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio... See More ⇒

 6.3. Size:1350K  sanrise-tech
 srt04n016l.pdf pdf_icon

SRT04N012L

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016L General Description Symbol The Sanrise SRT04N016L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous... See More ⇒

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Detailed specifications: SRT03N023H, SRT03N023L, SRT03N050LD56TR-G, SRT045N012H, SRT045N012HS2, SRT045N012HTC-GS, SRT045N025H, SRT045N060H, AO3401, SRT04N016IL, SRT04N016L, SRT04N016LS2TR-GS, SRT04N016LTC-GS, SRT04N016LDTR-GS, SRT04N024L, SRT04N024LD56TR-GS, SRT04N037L

Keywords - SRT04N012L MOSFET specs

 SRT04N012L cross reference

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.