SRT04N024LD56TR-GS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRT04N024LD56TR-GS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 78.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 132 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 762 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm

Encapsulados: PDFN5X6

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SRT04N024LD56TR-GS datasheet

 0.1. Size:1004K  sanrise-tech
 srt04n024ld56tr-gs.pdf pdf_icon

SRT04N024LD56TR-GS

Datasheet 2.4m , 40V, N-Channel Power MOSFET SRT04N024LD56TR-GS General Description Symbol The Sanrise SRT04N024LD56TR-GS is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4 low gate charge and fast switching time, making it especially suitable for applications which

 4.1. Size:1258K  sanrise-tech
 srt04n024l.pdf pdf_icon

SRT04N024LD56TR-GS

Datasheet 2.4m , 40V, N-Channel Power MOSFET SRT04N024L General Description Symbol The Sanrise SRT04N024L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

 7.1. Size:970K  sanrise-tech
 srt04n016il.pdf pdf_icon

SRT04N024LD56TR-GS

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require super

 7.2. Size:1483K  sanrise-tech
 srt04n012l.pdf pdf_icon

SRT04N024LD56TR-GS

Datasheet 1.2m , 40V, N-Channel Power MOSFET SRT04N012L General Description Symbol The Sanrise SRT04N012L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

MOSTRAR MÁS

Otros transistores... SRT045N060H, SRT04N012L, SRT04N016IL, SRT04N016L, SRT04N016LS2TR-GS, SRT04N016LTC-GS, SRT04N016LDTR-GS, SRT04N024L, 13N50, SRT04N037L, SRT04N037LS, SRT06N022HD, SRT06N022HS, SRT06N022HT, SRT06N027HD, SRT06N027HT, SRT06N095LD56G