SRT04N024LD56TR-GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SRT04N024LD56TR-GS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 78.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 132 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 40 nC
   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 762 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
   Paquete / Cubierta: PDFN5X6

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SRT04N024LD56TR-GS Datasheet (PDF)

0.1. Size:1004K sanrise-tech
srt04n024ld56tr-gs.pdf

Datasheet 2.4m, 40V, N-Channel Power MOSFET SRT04N024LD56TR-GS General Description Symbol The Sanrise SRT04N024LD56TR-GS is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which

4.1. Size:1258K sanrise-tech
srt04n024l.pdf

Datasheet2.4m, 40V, N-Channel Power MOSFET SRT04N024LGeneral Description SymbolThe Sanrise SRT04N024L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous

7.1. Size:970K sanrise-tech
srt04n016il.pdf

Datasheet 1.6m, 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require super

7.2. Size:1483K sanrise-tech
srt04n012l.pdf

Datasheet1.2m, 40V, N-Channel Power MOSFET SRT04N012LGeneral Description SymbolThe Sanrise SRT04N012L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous

7.3. Size:1451K sanrise-tech
srt04n037l.pdf

Datasheet3.7m, 40V, N-Channel Power MOSFET SRT04N037LGeneral Description SymbolThe Sanrise SRT04N037L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity.Figure 1 Symb

7.4. Size:1745K sanrise-tech
srt04n016ls.pdf

Datasheet 1.6m, 40V, N-Channel Power MOSFET SRT04N016LS General Description Symbol The Sanrise SRT04N016LS is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

7.5. Size:1350K sanrise-tech
srt04n016l.pdf

Datasheet1.6m, 40V, N-Channel Power MOSFET SRT04N016LGeneral Description SymbolThe Sanrise SRT04N016L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous

7.6. Size:1531K sanrise-tech
srt04n037ls.pdf

Datasheet3.7m, 40V, N-Channel Power MOSFET SRT04N037LSGeneral Description SymbolThe Sanrise SRT04N037LS is a low voltagepower MOSFET, fabricated using advanced splitgate trench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity.Figure 1 Sy

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