SRT04N024LD56TR-GS MOSFET. Datasheet pdf. Equivalent
Type Designator: SRT04N024LD56TR-GS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 78.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 132 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 762 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: PDFN5X6
SRT04N024LD56TR-GS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SRT04N024LD56TR-GS Datasheet (PDF)
srt04n024ld56tr-gs.pdf
Datasheet 2.4m, 40V, N-Channel Power MOSFET SRT04N024LD56TR-GS General Description Symbol The Sanrise SRT04N024LD56TR-GS is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which
srt04n024l.pdf
Datasheet2.4m, 40V, N-Channel Power MOSFET SRT04N024LGeneral Description SymbolThe Sanrise SRT04N024L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous
srt04n016il.pdf
Datasheet 1.6m, 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require super
srt04n012l.pdf
Datasheet1.2m, 40V, N-Channel Power MOSFET SRT04N012LGeneral Description SymbolThe Sanrise SRT04N012L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous
srt04n037l.pdf
Datasheet3.7m, 40V, N-Channel Power MOSFET SRT04N037LGeneral Description SymbolThe Sanrise SRT04N037L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity.Figure 1 Symb
srt04n016ls.pdf
Datasheet 1.6m, 40V, N-Channel Power MOSFET SRT04N016LS General Description Symbol The Sanrise SRT04N016LS is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio
srt04n016l.pdf
Datasheet1.6m, 40V, N-Channel Power MOSFET SRT04N016LGeneral Description SymbolThe Sanrise SRT04N016L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous
srt04n037ls.pdf
Datasheet3.7m, 40V, N-Channel Power MOSFET SRT04N037LSGeneral Description SymbolThe Sanrise SRT04N037LS is a low voltagepower MOSFET, fabricated using advanced splitgate trench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity.Figure 1 Sy
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
