SRT04N037L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRT04N037L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 487 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0037 Ohm

Encapsulados: PDFN5X6 PDFN3.3X3.3

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SRT04N037L datasheet

 ..1. Size:1451K  sanrise-tech
 srt04n037l.pdf pdf_icon

SRT04N037L

Datasheet 3.7m , 40V, N-Channel Power MOSFET SRT04N037L General Description Symbol The Sanrise SRT04N037L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density. Figure 1 Symb

 0.1. Size:1531K  sanrise-tech
 srt04n037ls.pdf pdf_icon

SRT04N037L

Datasheet 3.7m , 40V, N-Channel Power MOSFET SRT04N037LS General Description Symbol The Sanrise SRT04N037LS is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density. Figure 1 Sy

 7.1. Size:1004K  sanrise-tech
 srt04n024ld56tr-gs.pdf pdf_icon

SRT04N037L

Datasheet 2.4m , 40V, N-Channel Power MOSFET SRT04N024LD56TR-GS General Description Symbol The Sanrise SRT04N024LD56TR-GS is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4 low gate charge and fast switching time, making it especially suitable for applications which

 7.2. Size:970K  sanrise-tech
 srt04n016il.pdf pdf_icon

SRT04N037L

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require super

MOSTRAR MÁS

Otros transistores... SRT04N012L, SRT04N016IL, SRT04N016L, SRT04N016LS2TR-GS, SRT04N016LTC-GS, SRT04N016LDTR-GS, SRT04N024L, SRT04N024LD56TR-GS, AON7410, SRT04N037LS, SRT06N022HD, SRT06N022HS, SRT06N022HT, SRT06N027HD, SRT06N027HT, SRT06N095LD56G, SRT06N095LMG