SRT04N037L - описание и поиск аналогов

Datasheet 3.7m , 40V, N-Channel Power MOSFET SRT04N037L General Description Symbol The Sanrise SRT04N037L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density. Figure 1 Symb

Datasheet 3.7m , 40V, N-Channel Power MOSFET SRT04N037LS General Description Symbol The Sanrise SRT04N037LS is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density. Figure 1 Sy

Datasheet 2.4m , 40V, N-Channel Power MOSFET SRT04N024LD56TR-GS General Description Symbol The Sanrise SRT04N024LD56TR-GS is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4 low gate charge and fast switching time, making it especially suitable for applications which

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require super

Datasheet 1.2m , 40V, N-Channel Power MOSFET SRT04N012L General Description Symbol The Sanrise SRT04N012L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016LS General Description Symbol The Sanrise SRT04N016LS is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

Datasheet 1.6m , 40V, N-Channel Power MOSFET SRT04N016L General Description Symbol The Sanrise SRT04N016L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

Datasheet 2.4m , 40V, N-Channel Power MOSFET SRT04N024L General Description Symbol The Sanrise SRT04N024L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous