SRT08N100LD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRT08N100LD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 282 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO252

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SRT08N100LD datasheet

 4.1. Size:1230K  sanrise-tech
 srt08n100l.pdf pdf_icon

SRT08N100LD

Datasheet 10m , 80V, N-Channel Power MOSFET SRT08N100L General Description Symbol The Sanrise SRT08N100L is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superior

 8.1. Size:1338K  sanrise-tech
 srt08n055h.pdf pdf_icon

SRT08N100LD

Datasheet 5.5m , 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superio

 8.2. Size:789K  sanrise-tech
 srt08n025hc56tr-g.pdf pdf_icon

SRT08N100LD

Datasheet 2.5m , 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4 resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S

 8.3. Size:894K  sanrise-tech
 srt08n015htltr-g.pdf pdf_icon

SRT08N100LD

Datasheet 1.1m , 80V, N-Channel Power MOSFET SRT08N015HTLTR-G General Description Symbol The Sanrise SRT08N015HTLTR-G is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and

MOSTRAR MÁS

Otros transistores... SRT08N015HTLTR-G, SRT08N025HD, SRT08N025HT, SRT08N025HS, SRT08N025HC56TR-G, SRT08N055H, SRT08N100LM, SRT08N100LT, 10N65, SRT10N022HTLTR-G, SRT10N040HC, SRT10N040L, SRT10N043HD, SRT10N043HT, SRT10N043HS, SRT10N047HD56, SRT10N047HTC