SRT08N100LD Specs and Replacement

Type Designator: SRT08N100LD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 49 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 282 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO252

SRT08N100LD substitution

- MOSFET ⓘ Cross-Reference Search

 

SRT08N100LD datasheet

 4.1. Size:1230K  sanrise-tech
 srt08n100l.pdf pdf_icon

SRT08N100LD

Datasheet 10m , 80V, N-Channel Power MOSFET SRT08N100L General Description Symbol The Sanrise SRT08N100L is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superior... See More ⇒

 8.1. Size:1338K  sanrise-tech
 srt08n055h.pdf pdf_icon

SRT08N100LD

Datasheet 5.5m , 80V, N-Channel Power MOSFET SRT08N055H General Description Symbol The Sanrise SRT08N055H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superio... See More ⇒

 8.2. Size:789K  sanrise-tech
 srt08n025hc56tr-g.pdf pdf_icon

SRT08N100LD

Datasheet 2.5m , 80V, N-Channel Power MOSFET SRT08N025HC56TR-G General Description Symbol The Sanrise SRT08N025HC56TR-G is a low Drain 5,6,7,8 voltage power MOSFET, fabricated using advanced split gate trench technology. The Gate 4 resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which S... See More ⇒

 8.3. Size:894K  sanrise-tech
 srt08n015htltr-g.pdf pdf_icon

SRT08N100LD

Datasheet 1.1m , 80V, N-Channel Power MOSFET SRT08N015HTLTR-G General Description Symbol The Sanrise SRT08N015HTLTR-G is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and... See More ⇒

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Detailed specifications: SRT08N015HTLTR-G, SRT08N025HD, SRT08N025HT, SRT08N025HS, SRT08N025HC56TR-G, SRT08N055H, SRT08N100LM, SRT08N100LT, 10N65, SRT10N022HTLTR-G, SRT10N040HC, SRT10N040L, SRT10N043HD, SRT10N043HT, SRT10N043HS, SRT10N047HD56, SRT10N047HTC

Keywords - SRT08N100LD MOSFET specs

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