SRT10N022HTLTR-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRT10N022HTLTR-G

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 375 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 305 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 38 nS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm

Encapsulados: TOLL

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SRT10N022HTLTR-G datasheet

 0.1. Size:883K  sanrise-tech
 srt10n022htltr-g.pdf pdf_icon

SRT10N022HTLTR-G

Datasheet 1.9m , 100V, N-Channel Power MOSFET SRT10N022HTLTR-G General Description Symbol The Sanrise SRT10N022HTLTR-G is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low Qg charge and fast switching time, making it especially suitable for applications which require superior power density and s

 7.1. Size:1506K  sanrise-tech
 srt10n090l.pdf pdf_icon

SRT10N022HTLTR-G

Datasheet 9m , 100V, N-Channel Power MOSFET SRT10N090L General Description Symbol The Sanrise SRT10N090L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

 7.2. Size:1919K  sanrise-tech
 srt10n043h.pdf pdf_icon

SRT10N022HTLTR-G

Datasheet 4.3m , 100V, N-Channel Power MOSFET SRT10N043H General Description Symbol The Sanrise SRT10N043H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou

 7.3. Size:1094K  sanrise-tech
 srt10n070l.pdf pdf_icon

SRT10N022HTLTR-G

Datasheet 7m , 100V, N-Channel Power MOSFET SRT10N070L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N070L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which re

MOSTRAR MÁS

Otros transistores... SRT08N025HD, SRT08N025HT, SRT08N025HS, SRT08N025HC56TR-G, SRT08N055H, SRT08N100LM, SRT08N100LT, SRT08N100LD, 5N60, SRT10N040HC, SRT10N040L, SRT10N043HD, SRT10N043HT, SRT10N043HS, SRT10N047HD56, SRT10N047HTC, SRT10N047HTF