SRT10N022HTLTR-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SRT10N022HTLTR-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 305 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.8 V
   Qgⓘ - Carga de la puerta: 170 nC
   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 1100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm
   Paquete / Cubierta: TOLL

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SRT10N022HTLTR-G Datasheet (PDF)

0.1. Size:883K sanrise-tech
srt10n022htltr-g.pdf

Datasheet1.9m, 100V, N-Channel Power MOSFET SRT10N022HTLTR-GGeneral Description SymbolThe Sanrise SRT10N022HTLTR-G is a low voltagepower MOSFET, fabricated using advanced split gatetrench technology. The resulting device has extremelylow on resistance, low Qg charge and fast switchingtime, making it especially suitable for applicationswhich require superior power density and s

7.1. Size:1506K sanrise-tech
srt10n090l.pdf

Datasheet9m, 100V, N-Channel Power MOSFET SRT10N090LGeneral Description SymbolThe Sanrise SRT10N090L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous

7.2. Size:1919K sanrise-tech
srt10n043h.pdf

Datasheet4.3m, 100V, N-Channel Power MOSFET SRT10N043HGeneral Description SymbolThe Sanrise SRT10N043H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou

7.3. Size:1094K sanrise-tech
srt10n070l.pdf

Datasheet 7m, 100V, N-Channel Power MOSFET SRT10N070L General Description Symbol Drain 5,6,7,8The Sanrise SRT10N070L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which re

7.4. Size:1152K sanrise-tech
srt10n040l.pdf

Datasheet 4.0m, 100V, N-Channel Power MOSFET SRT10N040L General Description Symbol The Sanrise SRT10N040L is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superi

7.5. Size:1766K sanrise-tech
srt10n070h.pdf

Datasheet7m, 100V, N-Channel Power MOSFET SRT10N070HGeneral Description SymbolThe Sanrise SRT10N070H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerTO-220C PDFN5*6density

7.6. Size:728K sanrise-tech
srt10n047hc56tr-g.pdf

Datasheet 4.7m, 100V, N-Channel Power MOSFET SRT10N047HC56TR-G General Description Symbol The Sanrise SRT10N047HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which

7.7. Size:1302K sanrise-tech
srt10n040hc.pdf

Datasheet4.0m, 100V, N-Channel Power MOSFET SRT10N040HCGeneral Description SymbolThe Sanrise SRT10N040HC is a low voltagepower MOSFET, fabricated using advanced splitgate trench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchron

7.8. Size:768K sanrise-tech
srt10n047ld56tr-g.pdf

Datasheet 4.7m, 100V, N-Channel Power MOSFET SRT10N047LD56TR-G General Description Symbol The Sanrise SRT10N047LD56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which

7.9. Size:1764K sanrise-tech
srt10n047h.pdf

Datasheet4.7m, 100V, N-Channel Power MOSFET SRT10N047HGeneral Description SymbolThe Sanrise SRT10N047H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerTO-263-2/TO-220C/TO-24

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