SRT10N022HTLTR-G Specs and Replacement
Type Designator: SRT10N022HTLTR-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 305 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 1100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
Package: TOLL
SRT10N022HTLTR-G substitution
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SRT10N022HTLTR-G datasheet
srt10n022htltr-g.pdf
Datasheet 1.9m , 100V, N-Channel Power MOSFET SRT10N022HTLTR-G General Description Symbol The Sanrise SRT10N022HTLTR-G is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low Qg charge and fast switching time, making it especially suitable for applications which require superior power density and s... See More ⇒
srt10n090l.pdf
Datasheet 9m , 100V, N-Channel Power MOSFET SRT10N090L General Description Symbol The Sanrise SRT10N090L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous ... See More ⇒
srt10n043h.pdf
Datasheet 4.3m , 100V, N-Channel Power MOSFET SRT10N043H General Description Symbol The Sanrise SRT10N043H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou... See More ⇒
srt10n070l.pdf
Datasheet 7m , 100V, N-Channel Power MOSFET SRT10N070L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N070L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which re... See More ⇒
Detailed specifications: SRT08N025HD, SRT08N025HT, SRT08N025HS, SRT08N025HC56TR-G, SRT08N055H, SRT08N100LM, SRT08N100LT, SRT08N100LD, 5N60, SRT10N040HC, SRT10N040L, SRT10N043HD, SRT10N043HT, SRT10N043HS, SRT10N047HD56, SRT10N047HTC, SRT10N047HTF
Keywords - SRT10N022HTLTR-G MOSFET specs
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SRT10N022HTLTR-G substitution
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