FDMS2506SDC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMS2506SDC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 49 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
Encapsulados: POWER56
Búsqueda de reemplazo de FDMS2506SDC MOSFET
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FDMS2506SDC datasheet
fdms2506sdc.pdf
July 2010 FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.1 m
fdms2502sdc.pdf
July 2010 FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 1.7 m at
fdms2504sdc.pdf
July 2010 FDMS2504SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 1.75 m
fdms2508sdc.pdf
July 2010 FDMS2508SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.95 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.85 m
Otros transistores... STM9930A , FDMQ8203 , STM9926 , STM9435 , FDMS0312S , STM8820 , FDMS2502SDC , FDMS2504SDC , IRFB3607 , FDMS2508SDC , FDMS2510SDC , FDMS2572 , FDMS2672 , STM8601 , FDMS2734 , FDMS3500 , FDMS3572 .
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