SRT10N120LM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRT10N120LM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 364 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: SOP8
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SRT10N120LM datasheet
srt10n120l.pdf
Datasheet 10m , 100V, N-Channel Power MOSFET SRT10N120L General Description Symbol The Sanrise SRT10N120L uses advanced split Drain 5,6,7,8 gate trench technology. It has extremely low on resistance, low gate charge and fast switching Gate 4 time. This device is ideal for high frequency switching and synchronous rectification. The SRT10N120L break down voltage is 100V Source
srt10n160l.pdf
Datasheet 16m , 100V, N-Channel Power MOSFET SRT10N160L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N160L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which r
srt10n130h.pdf
Datasheet 13m , 100V, N-Channel Power MOSFET SRT10N130H General Description Symbol The Sanrise SRT10N130H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superio
Otros transistores... SRT10N047HC56TR-G, SRT10N047LD56TR-G, SRT10N070HD, SRT10N070HT, SRT10N070L, SRT10N090L, SRT10N090L, SRT10N090L, IRFZ46N, SRT10N120LD1, SRT10N120LD, SRT10N120LTC, SRT10N120LD56, SRT10N130H, SRT10N160LD56, SRT10N160LM, SRT10N160LD
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