SRT10N120LM Datasheet and Replacement

Datasheet 10m, 100V, N-Channel Power MOSFET SRT10N120L General Description Symbol The Sanrise SRT10N120L uses advanced split Drain 5,6,7,8gate trench technology. It has extremely low on resistance, low gate charge and fast switching Gate 4time. This device is ideal for high frequency switching and synchronous rectification. The SRT10N120L break down voltage is 100V Source

Datasheet 16m, 100V, N-Channel Power MOSFET SRT10N160L General Description Symbol Drain 5,6,7,8The Sanrise SRT10N160L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which r

Datasheet 13m, 100V, N-Channel Power MOSFET SRT10N130H General Description Symbol The Sanrise SRT10N130H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio