FDMS2734 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

March 2011FDMS2734N-Channel UltraFET Trench MOSFET 250V, 14A, 122m Features General Description Max rDS(on) = 122m at VGS = 10V, ID = 2.8AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 130m at VGS = 6V, ID = 1.7AOptimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller Charge

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

July 2010FDMS2510SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.2 m at

July 2010FDMS2502SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 1.7 m at

February 2007FDMS2672tmN-Channel UltraFET Trench MOSFET 200V, 20A, 77mFeatures General Description Max rDS(on) = 77m at VGS = 10V, ID = 3.7AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 88m at VGS = 6V, ID = 3.5AOptimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller C

July 2010FDMS2506SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.1 m

July 2010FDMS2504SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 1.75 m

February 2007FDMS2572tmN-Channel UltraFET Trench MOSFET 150V, 27A, 47mFeatures General Description Max rDS(on) = 47m at VGS = 10V, ID = 4.5AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 53m at VGS = 6V, ID = 4.5AOptimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller

July 2010FDMS2508SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.95 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.85 m

www.onsemi.comFDMS2D4N03SN-Channel PowerTrench SyncFETTM 30 V, 163 A, 1.8 mFeatures General DescriptionThe FDMS2D4N03S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.34 m at VGS = 4.5 V, ID = 26 Apackage technologies have been combined to offer the lowe

February 2007FDMS2672tmN-Channel UltraFET Trench MOSFET 200V, 20A, 77mFeatures General Description Max rDS(on) = 77m at VGS = 10V, ID = 3.7AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 88m at VGS = 6V, ID = 3.5AOptimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller C