FDMS2734 Todos los transistores

 ..1. Size:311K  fairchild semi
 fdms2734.pdf

March 2011 FDMS2734 N-Channel UltraFET Trench MOSFET 250V, 14A, 122m Features General Description Max rDS(on) = 122m at VGS = 10V, ID = 2.8A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Max rDS(on) = 130m at VGS = 6V, ID = 1.7A Optimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller Charge

 ..2. Size:425K  onsemi
 fdms2734.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:309K  fairchild semi
 fdms2510sdc.pdf

July 2010 FDMS2510SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.2 m at

 9.2. Size:317K  fairchild semi
 fdms2502sdc.pdf

July 2010 FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 1.7 m at

 9.3. Size:508K  fairchild semi
 fdms2672.pdf

February 2007 FDMS2672 tm N-Channel UltraFET Trench MOSFET 200V, 20A, 77m Features General Description Max rDS(on) = 77m at VGS = 10V, ID = 3.7A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Max rDS(on) = 88m at VGS = 6V, ID = 3.5A Optimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller C

 9.4. Size:420K  fairchild semi
 fdms2506sdc.pdf

July 2010 FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.1 m

 9.5. Size:298K  fairchild semi
 fdms2504sdc.pdf

July 2010 FDMS2504SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 1.75 m

 9.6. Size:513K  fairchild semi
 fdms2572.pdf

February 2007 FDMS2572 tm N-Channel UltraFET Trench MOSFET 150V, 27A, 47m Features General Description Max rDS(on) = 47m at VGS = 10V, ID = 4.5A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Max rDS(on) = 53m at VGS = 6V, ID = 4.5A Optimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller

 9.7. Size:302K  fairchild semi
 fdms2508sdc.pdf

July 2010 FDMS2508SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.95 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 2.85 m

 9.8. Size:1014K  onsemi
 fdms2d4n03s.pdf

www.onsemi.com FDMS2D4N03S N-Channel PowerTrench SyncFETTM 30 V, 163 A, 1.8 m Features General Description The FDMS2D4N03S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.34 m at VGS = 4.5 V, ID = 26 A package technologies have been combined to offer the lowe

 9.9. Size:508K  onsemi
 fdms2672.pdf

February 2007 FDMS2672 tm N-Channel UltraFET Trench MOSFET 200V, 20A, 77m Features General Description Max rDS(on) = 77m at VGS = 10V, ID = 3.7A UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Max rDS(on) = 88m at VGS = 6V, ID = 3.5A Optimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller C