Справочник MOSFET. FDMS2734

 

FDMS2734 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMS2734
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 78 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.122 Ohm
   Тип корпуса: POWER56

 Аналог (замена) для FDMS2734

 

 

FDMS2734 Datasheet (PDF)

 ..1. Size:311K  fairchild semi
fdms2734.pdf

FDMS2734
FDMS2734

March 2011FDMS2734N-Channel UltraFET Trench MOSFET 250V, 14A, 122m Features General Description Max rDS(on) = 122m at VGS = 10V, ID = 2.8AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 130m at VGS = 6V, ID = 1.7AOptimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller Charge

 ..2. Size:425K  onsemi
fdms2734.pdf

FDMS2734
FDMS2734

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:309K  fairchild semi
fdms2510sdc.pdf

FDMS2734
FDMS2734

July 2010FDMS2510SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.9 m at VGS = 10 V, ID = 23 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.2 m at

 9.2. Size:317K  fairchild semi
fdms2502sdc.pdf

FDMS2734
FDMS2734

July 2010FDMS2502SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.2 m at VGS = 10 V, ID = 35 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 1.7 m at

 9.3. Size:508K  fairchild semi
fdms2672.pdf

FDMS2734
FDMS2734

February 2007FDMS2672tmN-Channel UltraFET Trench MOSFET 200V, 20A, 77mFeatures General Description Max rDS(on) = 77m at VGS = 10V, ID = 3.7AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 88m at VGS = 6V, ID = 3.5AOptimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller C

 9.4. Size:420K  fairchild semi
fdms2506sdc.pdf

FDMS2734
FDMS2734

July 2010FDMS2506SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.45 m at VGS = 10 V, ID = 30 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.1 m

 9.5. Size:298K  fairchild semi
fdms2504sdc.pdf

FDMS2734
FDMS2734

July 2010FDMS2504SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.25 m at VGS = 10 V, ID = 32 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 1.75 m

 9.6. Size:513K  fairchild semi
fdms2572.pdf

FDMS2734
FDMS2734

February 2007FDMS2572tmN-Channel UltraFET Trench MOSFET 150V, 27A, 47mFeatures General Description Max rDS(on) = 47m at VGS = 10V, ID = 4.5AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 53m at VGS = 6V, ID = 4.5AOptimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller

 9.7. Size:302K  fairchild semi
fdms2508sdc.pdf

FDMS2734
FDMS2734

July 2010FDMS2508SDCN-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.95 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 1.95 m at VGS = 10 V, ID = 28 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 2.85 m

 9.8. Size:1014K  onsemi
fdms2d4n03s.pdf

FDMS2734
FDMS2734

www.onsemi.comFDMS2D4N03SN-Channel PowerTrench SyncFETTM 30 V, 163 A, 1.8 mFeatures General DescriptionThe FDMS2D4N03S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 28 Apower conversion application. Advancements in both silicon and Max rDS(on) = 2.34 m at VGS = 4.5 V, ID = 26 Apackage technologies have been combined to offer the lowe

 9.9. Size:508K  onsemi
fdms2672.pdf

FDMS2734
FDMS2734

February 2007FDMS2672tmN-Channel UltraFET Trench MOSFET 200V, 20A, 77mFeatures General Description Max rDS(on) = 77m at VGS = 10V, ID = 3.7AUItraFET devices combine characteristics that enablebenchmark efficiency in power conversion applications. Max rDS(on) = 88m at VGS = 6V, ID = 3.5AOptimized for rDS(on), low ESR, low total and Miller gate charge, Low Miller C

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