VS3604AT Todos los transistores

VS3604AT 30V/180A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.1 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 2.8 m Enhancement mode I D 180 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3604AT TO-220AB 3... See More ⇒

VS3604DT 30V/300A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 1.3 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 1.6 m Very low on-resistance RDS(on) @ VGS=4.5 V I D 300 A Ultra-Low Gate Impedance TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3604DT TO-... See More ⇒

VS3604DM 30V/300A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 1.3 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 1.7 m Very low on-resistance RDS(on) @ VGS=4.5 V I D 300 A Ultra-Low Gate Impedance TO-263 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3604DM TO-26... See More ⇒

VS3602GPMT 30V/200A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 0.6 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 0.9 m Ultra low on-resistance I D(Silicon Limited) 440 A VitoMOS Technology I D(Package Limited) 200 A Fast Switching and High efficiency PDFN5x6 100% Avalanche tested, 100% Rg tested Part ID Package Type Marki... See More ⇒

VS3606AD 30V/110A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.6 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 3.5 m Enhancement mode I D 110 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-252 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3... See More ⇒

VS3605ABT 30V/145A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 1.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 2.2 m Low RDS(on) to minimize conduction losses I D(Silicon Limited) 145 A 100% Avalanche Tested,100% Rg Tested TDFN3333 Part ID Package Type Marking Packing VS3605ABT TDFN3333 3605AB 5000PCS/Reel Maximum ratings, at TA =25 C... See More ⇒

VS3606AP 30V/106A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.0 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 2.9 m Enhancement mode I D 106 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Mark... See More ⇒

VS3606AE 30V/92A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 3.4 m Very Low on-resistance I D 92 A Fast Switching 100% Avalanche test PDFN3333 Part ID Package Type Marking Packing VS3606AE PDFN3333 3606AE 5000PCS/Reel Maximum ratings, at TA =25 C, unless otherwise specified Symbol ... See More ⇒

VS3603GPMT 30V/200A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 1.1 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 1.6 m Very low on-resistance I D(Silicon Limited) 205 A VitoMOS Technology I D(Package Limited) 200 A Fast Switching and High efficiency PDFN5x6 100% Avalanche test Part ID Package Type Marking Packing VS3603G... See More ⇒

VS3606ATD 30V/140A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 3 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 4 m Enhancement mode I D 140 A Very low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche Tested TO-263 Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3606ATD TO-263 3606ATD ... See More ⇒

VS3606AT 30V/140A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 3 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 4 m Enhancement mode I D 140 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3606AT TO-220AB 3606AT... See More ⇒