VS3604AT Specs and Replacement

Type Designator: VS3604AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.5 nS

Cossⓘ - Output Capacitance: 785 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO220AB

VS3604AT substitution

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VS3604AT datasheet

 ..1. Size:1051K  cn vgsemi
vs3604at.pdf pdf_icon

VS3604AT

VS3604AT 30V/180A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.1 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 2.8 m Enhancement mode I D 180 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3604AT TO-220AB 3... See More ⇒

 8.1. Size:1048K  cn vgsemi
vs3604dt.pdf pdf_icon

VS3604AT

VS3604DT 30V/300A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 1.3 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 1.6 m Very low on-resistance RDS(on) @ VGS=4.5 V I D 300 A Ultra-Low Gate Impedance TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3604DT TO-... See More ⇒

 8.2. Size:1033K  cn vgsemi
vs3604dm.pdf pdf_icon

VS3604AT

VS3604DM 30V/300A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 1.3 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 1.7 m Very low on-resistance RDS(on) @ VGS=4.5 V I D 300 A Ultra-Low Gate Impedance TO-263 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3604DM TO-26... See More ⇒

 9.1. Size:875K  cn vgsemi
vs3602gpmt.pdf pdf_icon

VS3604AT

VS3602GPMT 30V/200A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 0.6 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 0.9 m Ultra low on-resistance I D(Silicon Limited) 440 A VitoMOS Technology I D(Package Limited) 200 A Fast Switching and High efficiency PDFN5x6 100% Avalanche tested, 100% Rg tested Part ID Package Type Marki... See More ⇒

Detailed specifications: HCCW120R040H1, HCCZ120R040H1, VS2622AA, VS2622AD, VS2622AL, VS3510DS, VS3602GPMT, VS3603GPMT, BS170, VS3604DM, VS3604DT, VS3605ABT, VS3606AD, VS3606AE, VS3606AP, VS3606AT, VS3606ATD

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