VS3612GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VS3612GP
   Código: 3612GP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 36 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 72 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.3 V
   Carga de la puerta (Qg): 25 nC
   Tiempo de subida (tr): 77 nS
   Conductancia de drenaje-sustrato (Cd): 760 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0047 Ohm
   Paquete / Cubierta: PDFN5X6

Búsqueda de reemplazo de MOSFET VS3612GP

VS3612GP Datasheet (PDF)

..1. Size:990K cn vgsemi
vs3612gp.pdf

VS3612GP30V/45A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 3.6 m Enhancement modeR DS(on),TYP@ VGS=4.5V 5.3 m Very low on-resistanceI D(Silicon Limited) 72 A VitoMOS TechnologyI D(Package Limited) 45 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche TestedPart ID Package Type Marking PackingVS3612GP PDF

9.1. Size:609K cn vanguard
vs3618ae.pdf

VS3618AE 30V/50A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 6 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 50 A Very low on-resistance RDS(on) @ VGS=4.5 V PDFN3333 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Packag

9.2. Size:1009K cn vanguard
vs3610ae.pdf

VS3610AE 30V/64A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 4 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 5.7 m Enhancement mode I D 64 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Pack

9.3. Size:2538K cn vanguard
vs3618be.pdf

VS3618BE30V/30A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.2 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 7.8 m Fast Switching and High efficiencyI D(Silicon Limited) 50 A 100% Avalanche TestedI D(Package Limited) 30 APDFN3333Part ID Package Type Marking PackingVS3618BE PDFN3333 3618BE 5000PCS/ReelMaximum ratings, at TA =25

9.4. Size:928K cn vgsemi
vs3618ae.pdf

VS3618AE30V/32A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 6.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8.8 m Fast Switching and High efficiencyI D(Silicon Limited) 50 A 100% Avalanche testI D(Package Limited) 32 APDFN3333Part ID Package Type Marking PackingVS3618AE PDFN3333 3618AE 5000PCS/ReelMaximum ratings, at TA =25C,

9.5. Size:1032K cn vgsemi
vs3618ad.pdf

VS3618AD30V/70A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 9 m Enhancement modeI D 70 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3618A

9.6. Size:1043K cn vgsemi
vs3614ae.pdf

VS3614AE30V/58A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 8 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 58 A Fast Switching and High efficiencyPDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3614AE PDFN3333 3614AE

9.7. Size:897K cn vgsemi
vs3614gp.pdf

VS3614GP30V/31A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 3.7 m Enhancement modeR DS(on),TYP@ VGS=4.5V 6.2 m Very low on-resistanceI D(Silicon Limited) 60 A VitoMOS TechnologyI D(Package Limited) 31 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Packin

9.8. Size:983K cn vgsemi
vs3610ae.pdf

VS3610AE30V/64A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 5.7 m Enhancement modeI D 64 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS361

9.9. Size:999K cn vgsemi
vs3618as.pdf

VS3618AS30V/16A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 6.6 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 9.6 m Enhancement modeI D 16 A Low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche testSOP8 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3618AS SOP8 3618AS 3000PCS/Ree

9.10. Size:976K cn vgsemi
vs3615ge.pdf

VS3615GE30V/40A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 5.6 m Very low on-resistanceI D(Silicon Limited) 67 A VitoMOS TechnologyI D(Package Limited) 40 A Fast Switching and High efficiencyPDFN3333 100% Avalanche TestedPart ID Package Type Marking PackingVS3615GE

9.11. Size:1141K cn vgsemi
vs3618be.pdf

VS3618BE30V/58A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.2 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 7.8 m Fast Switching and High efficiencyI D(Silicon Limited) 58 A 100% Avalanche TestedPDFN3333Part ID Package Type Marking PackingVS3618BE PDFN3333 3618BE 5000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specifi

9.12. Size:945K cn vgsemi
vs3610ad.pdf

VS3610AD30V/85A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 6 m Enhancement modeI D 85 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingTO-252 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3610A

9.13. Size:1052K cn vgsemi
vs3615ga.pdf

VS3615GA30V/13A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 3.6 m Enhancement modeR DS(on),TYP@ VGS=4.5V 5.6 m Very low on-resistanceI D(Silicon Limited) 13 A VitoMOS TechnologyDFN2x2x0.75-6L Fast Switching and High efficiencyPart ID Package Type Marking PackingVS3615GA DFN2x2x0.75-6L 3615GA 3000pcs/ReelMaximum rating

9.14. Size:947K cn vgsemi
vs3610ai.pdf

VS3610AI30V/85A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 4.2 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 6 m Enhancement modeI D 85 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiencyTO-251SL 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Ma

9.15. Size:784K cn vgsemi
vs3614ge.pdf

VS3614GE30V/31A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 5.8 m Low RDS(on) to minimize conduction lossesI D(Wire bond Limited) 31 A VitoMOS Technolog 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVS3614GE PDFN3333 3614GE 5000PCS/ReelMa

9.16. Size:1161K cn vgsemi
vs3618ah.pdf

VS3618AH30V/8A N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 9.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 13 m Fast SwitchingI D 8 A High EffectiveSOT23-6LPart ID Package Type Marking PackingVS3618AH SOT23-6L VS02 3000pcs/reelMaximum ratings, at TA =25C, unless otherwise specifiedSymbol Parameter Rating UnitV(BR)DSS Drain-

9.17. Size:1020K cn vgsemi
vs3610ap.pdf

VS3610AP30V/70A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3.7 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 5.4 m Enhancement modeI D 70 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS36

9.18. Size:1043K cn vgsemi
vs3618ap.pdf

VS3618AP30V/54A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5.4 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 8.4 m Enhancement modeI D 54 A Very low on-resistance RDS(on) @ VGS=4.5 VPDFN5x6 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS36

9.19. Size:1012K cn vgsemi
vs3614ad.pdf

VS3614AD30V/75A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 7.5 m Low on-resistance RDS(on) @ VGS=4.5 VI D 75 A Fast Switching and High efficiencyTO-252 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3614ADTO-252 3614AD 2500pcs/

9.20. Size:827K cn vgsemi
vs3610gpmt.pdf

VS3610GPMT30V/78A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 2.5 m Enhancement modeR DS(on),TYP@ VGS=4.5V 3.7 m Low RDS(on) to minimize conduction lossesI D 78 A VitoMOS Technology 100% Avalanche Tested,100% Rg Tested PDFN5x6 Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesPart ID Package Type Ma

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