VS4401AMH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS4401AMH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 375 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 200 nS
Cossⓘ - Capacitancia de salida: 1700 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de VS4401AMH MOSFET
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VS4401AMH datasheet
vs4401amh.pdf
VS4401AMH 40V/130A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 1.4 m Enhancement mode I D(Wire bond Limited) 130 A Very low on-resistance Fast Switching and High efficiency TO-263 100% Avalanche test Part ID Package Type Marking Packing VS4401AMH TO-263 4401AMH 800pcs/Reel Maximum ratings, at TA =25 C, unless otherwise specified Sy
vs4401ath.pdf
VS4401ATH 40V/130A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 1.4 m Enhancement mode I D(Silicon Limited) 400 A Very low on-resistance I D(Package Limited) 130 A Fast Switching and High efficiency TO-220AB 100% Avalanche test Part ID Package Type Marking Packing VS4401ATH TO-220AB 4401ATH 50pcs/Tube Maximum ratings, at TA =25 C, u
vs4401akh.pdf
VS4401AKH 40V/260A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 0.85 m Enhancement mode I D(Wire bond Limited) 260 A Ultra low RDS(on) to minimize conduction losses VitoMOS Technology TOLL 100% Avalanche Tested,100% Rg Tested Part ID Package Type Marking Packing VS4401AKH TOLL 4401AKH 2000PCS/Reel Maximum ratings, at TA =25 C,
nts4409n nvs4409n.pdf
NTS4409N, NVS4409N Small Signal MOSFET 25 V, 0.75 A, Single, N-Channel, ESD Protection, SC-70/SOT-323 Features http //onsemi.com Advance Planar Technology for Fast Switching, Low RDS(on) Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVS4409N 249 mW @ 4.5 V These Devices are Pb-Free and are RoHS Compliant 25
Otros transistores... VS3817GA, VS3817GPMT, VS3820GA2, VS3825GPMC, VS40200AD, VS40200AP, VS40200ATD, VS4401AKH, STP75NF75, VS4401ATH, VS4603DM6, VS4603GPHT, VS4603GPMT, VS4604AD, VS4604AT, VS4604ATD, VS4604DM
History: APT50M65B2FLL | IRFIZ46NPBF | IRFIZ48VPBF | PMPB95ENEA | IRFIZ48GPBF | IRFB7430 | IRFIZ48G
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